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2SC5138

Description
silicon npn epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size43KB,7 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC5138 Overview

silicon npn epitaxial

2SC5138 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-based maximum capacity1.05 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)6000 MHz
Base Number Matches1
2SC5138
Silicon NPN Epitaxial
ADE-208-225A (Z)
2nd. Edition
Mar. 2001
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 6 GHz typ
High gain, low noise figure
PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Note:
Marking is “YL–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
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