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2SK3069

Description
silicon N channel mos fet high speed power switching
CategoryDiscrete semiconductor    The transistor   
File Size54KB,10 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Environmental Compliance
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2SK3069 Overview

silicon N channel mos fet high speed power switching

2SK3069 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.012 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)300 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-694I (Z)
10th. Edition
February 1999
Features
Low on-resistance
R
DS(on)
= 6 mΩ typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
G
1
2
S
3
1. Gate
2. Drain(Flange)
3. Source

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