2SK3070(L), 2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1063-0900
(Previous: ADE-208-684G)
Rev.9.00
Sep 07, 2005
Features
•
Low on-resistance
R
DS(on)
=4.5 mΩ typ.
•
Low drive current
•
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
4
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
1
1
2
3
2
3
S
Rev.9.00 Sep 07, 2005 page 1 of 8
2SK3070(L), 2SK3070(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
Note
1
I
DR
I
AP
Note
3
E
AR
Note
3
Pch
Note
2
Tch
Tstg
Ratings
40
±20
75
300
75
50
333
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
40
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.5
6.5
80
6800
1300
380
130
25
30
60
300
550
400
1.05
90
Max
—
±0.1
10
2.5
5.8
10
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 40 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note
4
I
D
= 40 A, V
GS
= 10 V
Note
4
I
D
= 40 A, V
GS
= 4 V
Note
4
I
D
= 40 A, V
DS
= 10 V
Note
4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A,
R
L
= 0.75
Ω
I
F
= 75 A, V
GS
= 0
I
F
= 75 A, V
GS
= 0
di
F
/ dt = 50 A/ µs
Rev.9.00 Sep 07, 2005 page 2 of 8
2SK3070(L), 2SK3070(S)
Main Characteristics
Power vs. Temperature Derating
200
1000
300
µ
0
µ
s
s
1
m
s
10
Maximum Safe Operation Area
10
Channel Dissipation Pch (W)
Drain Current I
D
(A)
150
100
30
10
3
1
0.3
PW
=
DC
100
50
Operation in
this area is
limited by R
DS(on)
m
s
Op
(1
s
er
(T ati
hot)
c = on
25
°
C
)
10
0
50
100
150
200
0.1 Ta = 25°C
0.1 0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
4V
3.5 V
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
5V
60
V
GS
= 10 V
Pulse Test
Drain Current I
D
(A)
80
80
60
40
3V
40
75°C
25°C
Tc = –25°C
20
2.5 V
0
2
4
6
8
10
20
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
0.5
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
100
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Pulse Test
50
0.4
0.3
I
D
= 50 A
0.2
20 A
10 A
0
4
8
12
16
20
20
10
5
V
GS
= 4 V
10 V
2
1
0.1
1
3
10
30 100
300 1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.9.00 Sep 07, 2005 page 3 of 8
2SK3070(L), 2SK3070(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
20
Pulse Test
16
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
25°C
75°C
Tc = –25°C
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
12
V
GS
= 10 V
I
D
= 50 A
10, 20 A
10, 20, 50 A
8
4
0
–50
4V
0
50
100
150
200
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
30000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
0.1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Capacitance C (pF)
10000
Ciss
3000
1000
Coss
Crss
300
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 75 A
V
GS
V
DD
= 40 V
25 V
10 V
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
1000
500
td(off)
tf
tr
td(on)
100
80
16
Switching Time t (ns)
200
100
50
20
60
V
DS
12
40
8
20
V
DD
= 40 V
25 V
10 V
4
0
400
0
80
160
240
320
10
0.1 0.2 0.5 1
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
2
5 10 20
50 100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.9.00 Sep 07, 2005 page 4 of 8
2SK3070(L), 2SK3070(S)
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
(A)
100
10 V
80
5V
60
V
GS
= 0, –5 V
500
I
AP
= 50 A
V
DD
= 25 V
duty < 0.1 %
Rg > 50
Ω
Reverse Drain Current I
DR
400
300
40
200
20
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
100
0
25
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t)
• θ
ch – c
θ
ch – c = 1.25°C/W, Tc = 25°C
PDM
PW
T
0.03
0.02
1
lse
0.0
t pu
ho
1s
D=
PW
T
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
PW (S)
Avalanche Waveform
E
AR
=
1
2
•
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
I
D
Vin
15 V
50
Ω
0
V
DD
Rev.9.00 Sep 07, 2005 page 5 of 8
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