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2SC5050

Description
silicon npn epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size23KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC5050 Overview

silicon npn epitaxial

2SC5050 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.1 pF
Collector-emitter maximum voltage8 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)11000 MHz
Base Number Matches1
2SC5050
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 11 GHz Typ
High gain, low noise figure
PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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