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2SC4046

Description
silicon npn epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size32KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC4046 Overview

silicon npn epitaxial

2SC4046 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSIP
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz
Base Number Matches1
2SC4046
Silicon NPN Epitaxial
Application
High voltage amplifier
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
1
Tj
Tstg
Ratings
120
120
5
0.2
8
150
–55 to +150
Unit
V
V
V
A
W
°C
°C
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