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2SC4126

Description
silicon npn epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size48KB,8 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC4126 Overview

silicon npn epitaxial

2SC4126 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage11 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)6000 MHz
Base Number Matches1
2SC4126
Silicon NPN Epitaxial
Application
VHF and UHF wide band amplifier
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter

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Index Files: 78  1787  2499  1457  653  2  36  51  30  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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