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2SC5049

Description
silicon npn epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size23KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC5049 Overview

silicon npn epitaxial

2SC5049 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.02 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage8 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10000 MHz
Base Number Matches1
2SC5049
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 10 GHz Typ
High gain, low noise figure
PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
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