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BYV36EGP

Description
sintered glass junction fast switching plastic rectifier voltage???200 - 1000v current: 1.5A
CategoryDiscrete semiconductor    diode   
File Size224KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Download Datasheet Parametric View All

BYV36EGP Overview

sintered glass junction fast switching plastic rectifier voltage???200 - 1000v current: 1.5A

BYV36EGP Parametric

Parameter NameAttribute value
MakerGulf Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.45 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BYV36AGP THRU BYV36EGP
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE:200 - 1000V
CURRENT: 1.5A
FEATURE
High temperature metallurgic ally bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta
=35°C
with no thermal run away
Typical Ir<0.1µA
DO-15
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse avalanche breakdown voltage
at IR = 0.1 mA
Maximum Average Forward Rectified
Ttp = 60
C; lead length = 10 mm;
Peak Forward Surge Currentt = 10 ms half sine
wave; Tj = Tj max
Maximum Forward Voltage at rated Forward
Current and 50°C
Non-repetitive peak reverse avalanche energy
(Note 1)
Maximum DC Reverse Current
Ta =25°C
at rated DC blocking voltage
Ta =150°C
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance
(Note 3)
Typical Thermal Resistance
(Note 4)
Storage and Operating Junction Temperature
Vrrm
Vrms
Vdc
BYV36A
GP
200
140
200
300
BYV36B
GP
400
280
400
500
1.6
BYV36C
GP
600
420
600
700
BYV36D
GP
800
560
800
900
1.5
BYV36E
GP
1000
700
1000
1100
units
V
V
V
V
A
A
V
(BR)R
(min)
If(av)
Ifsm
Vf
ERSM
Ir
Trr
Cj
Rθja
Tstg, Tj
30
1.35
10
5.0
150.0
100
45
55.0
-65 to +175
150
40
1.45
V
mJ
µA
µA
nS
pF
°C
/W
°C
Note: 1.R=400mA; Tj=Tjmax prior to surge; inductive load switched off
2.Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A6
www.gulfsemi.com
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