WEITRON
NPN Transistor
P b
Lead(Pb)-Free
3.
BASE
COLLECTOR
2.
2SD965
FEATURES :
* Flash unit of camera
* Switching circuit
1. EMITTER
2. COLLECTOR
3. BASE
1.
EMITTER
TO-92
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Value
42
22
6
5
750
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
Test
conditions
MIN
42
22
6
0.1
0.1
150
340
150
0.35
150
V
MHz
2000
TYP
MAX
UNIT
V
V
V
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
= 10μA, I
C
=0
V
CB
=30V,I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
= 0.15 mA
V
CE
= 2V,I
C
= 500 mA
V
CE
=2V, I
C
= 2A
I
C
=3000mA,I
B
=100 mA
V
CE
=6V,
I
C
=50mA,f=30MHz
μ
A
μ
A
CLASSIFICATION OF
Rank
Range
h
FE(2)
R
340-600
T
560-950
V
900-2000
WEITRON
hpp://www.weitron.com.tw
1/2
01-Sep-09
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EEWORLD
