Features
•
•
•
•
•
•
•
•
Active Mixer with Conversion Gain
No External LO Driver Necessary
Low LO Drive Level Required
RF and LO Ports May Be Driven Single-ended
Single 5-V Supply Voltage
High LO-RF Isolation
Broadband Resistive 50-Ω Impedances on All Three Ports
Small SSO16 Package
Applications
•
Digital Communication Systems
•
800 MHz to 1000 MHz Transceivers for Base Stations
Electrostatic sensitive device.
Observe precautions for handling.
800 MHz -
1000 MHz
High Linearity
SiGe Active
Receive Mixer
T0780
Preliminary
Description
The T0780 is a high linearity active mixer which is manufactured using Atmel’s
advanced Silicon-Germanium (SiGe) technology. This mixer features a frequency
range of 800 MHz to 1000 MHz. It operates from a single 5-V supply and provides
10 dB of conversion gain while requiring only 0 dBm input to the integrated LO driver.
An IF amplifier is also included.
The T0780 incorporates internal matching on each RF, IF and LO port to enhance
ease of use and to reduce the external components required. The RF and LO inputs
can be driven differentially or single-ended.
Figure 1.
Block Diagram
RFP
RFN
4
5
1
16
13
IFP
IFN
LOP
12
LON
Rev. 4525D–SIGE–10/03
Pin Configuration
Figure 2.
Pinning SSOP16
IFP
VCC
GND
RFP
RFN
GND
VCC
L1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
IFN
VCC
GND
LOP
LON
GND
VCC
L2
Pin Description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Symbol
IFP
VCC
GND
RFP
RFN
GND
VCC
L1
L2
VCC
GND
LON
LOP
GND
VCC
IFN
Function
IF positive output
5-V power supply
Ground
RF positive input
RF negative input
Ground
5-V power supply
External inductor terminal
External inductor terminal
5-V power supply
Ground
Local oscillator, negative input
Local oscillator, positive input
Ground
5-V power supply
IF negative output
Absolute Maximum Ratings
All voltages are referred to GND.
Parameters
Supply voltage
LO input
IF input
Operating temperature
Storage temperature
Symbol
V
CC
LO
P
, LO
N
RF
P
, RF
N
T
OP
T
stg
Value
5 to 5.5
10
15
-40 to +85
-65 to +150
Unit
V
dBm
dBm
°C
°C
2
T0780 [Preliminary]
4525D–SIGE–10/03
T0780 [Preliminary]
Thermal Resistance
Parameters
Junction ambient
Junction case
Symbol
R
thJA
R
thJC
Value
TBD
46
Unit
K/W
°C/W
Electrical Characteristics
Test Conditions: V
CC
= +5 V, T
amb
= +25°C; RF input: -20 dBm at 900 MHz; LO output: 0 dBm at 700 MHz
No.
1
1.1
1.11
1.2
1.5
1.6
1.3
1.4
1.7
1.8
1.9
1.10
2
2.1
2.2
2.3
3
3.1
3.1
Parameters
AC Performance
RF frequency range
LO frequency range
IF frequency range
Conversion gain
SSB noise figure
Input IP3
Input P1dB
RF return loss
LO return loss
IF return loss
LO drive
Isolation Performance
Leakage (LO-RF)
Leakage (LO-IF)
Leakage (RF-IF)
Miscellaneous
Supply voltage
Supply current
V
CC
I
CC
4.75
5
160
5.25
180
V
mA
A
A
Single-ended configuration
Single-ended configuration
Single-ended configuration
-40
-26
-40
-35
-20
-35
dBm
dBm
dBm
D
D
D
Matched to 50
W
(1)
Matched to 50
W
(1)
Matched to 50
W
(1)
Test Conditions/Pins
Pin
Symbol
f
RF
f
LO
F
IF
Min.
800
500
30
7
Typ.
Max.
1000
1000
Unit
MHz
MHz
MHz
dB
dB
dBm
dBm
dB
dB
dB
Type *
B, C
B, C
B, C
A
D
D
D
D
D
D
D
200
10
15
300
19
RF1 = RF2 = –15 dBm/tone,
1 MHz spacing
IP3
15
2
19
5
20
20
20
Matched to 50
W
(1)
-3
0
+3
dBm
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. The return losses shown were measured with the T0780 mounted on Atmel’s FR4 evaluation boards using standard
matching practices as indicated on the application schematic page herein. Users following the RF, LO and IF matching
guidelines will achieve similar performance.
3
4525D–SIGE–10/03
Typical Device Performance
Figure 3.
Conversion Gain versus Temperature
Conversion Gain vs Tem perature
20
Conversion Gain (dB)
16
12
8
4
0
800
-40ºC
+25ºC
+85ºC
850
900
Frequency (MHz)
950
1000
Figure 4.
Conversion Gain versus LO Drive, T
amb
= 25
°
C
Conversion Gain vs LO Drive
T=+25ºC
20
Conversion Gain (dB)
16
12
8
4
0
800
Plo=-3dBm
Plo=0dBm
Plo=+3dBm
850
900
Frequency (MHz)
950
1000
Figure 5.
Leakages, Plo = 0 dBm, Prf = -20 dBm, Single-ended Configuration
Leakages
Plo=0 dBm , Prf=-20 dBm
Singled-Ended Configuration (Note 1)
LO-RF
LO-IF
RF-IF
0
-10
Leakage (dBm)
-20
-30
-40
-50
-60
800
850
900
950
Frequency (MHz)
1000
4
T0780 [Preliminary]
4525D–SIGE–10/03
T0780 [Preliminary]
Figure 6.
Input IP3 versus Temerature
Input IP3 vs Tem perature
30
Input IP3 (dBm)
25
20
15
10
800
-40ºC
+25ºC
+85ºC
850
900
Frequency (MHz)
950
1000
Figure 7.
Input IP3 versus LO Drive, T
amb
= 25
°
C
Input IP3 vs LO Drive
T=+25ºC
30
Input IP3 (dBm)
25
20
15
10
800
Plo=-3dBm
Plo=0dBm
Plo=+3dBm
850
900
Frequency (MHz)
950
1000
Figure 8.
Noise Figure versus Temperature, Plo = 0 dBm
Noise Figure vs Tem perature
Plo=0dBm
20
Noise Figure (dB)
18
16
14
12
10
800
-40ºC
+25ºC
+85ºC
850
900
Frequency (MHz)
950
1000
5
4525D–SIGE–10/03
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