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P6SMB82A

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size242KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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P6SMB82A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

P6SMB82A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionR-PDSO-C2
Contacts2
Manufacturer packaging codeCASE 403A-03
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage86.1 V
Minimum breakdown voltage77.9 V
Breakdown voltage nominal value82 V
Maximum clamping voltage113 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage70.1 V
Maximum reverse current5 µA
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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