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S50VB80

Description
bridge diode(800v 50a)
CategoryDiscrete semiconductor    diode   
File Size269KB,5 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Environmental Compliance
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bridge diode(800v 50a)

S50VB80 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionS-XUFM-D4
Contacts4
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeS-XUFM-D4
Maximum non-repetitive peak forward current500 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current30 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
SHINDENGEN
Bridge Diode
Square In-line Package
S50VB80
800V 50A
OUTLINE DIMENSIONS
Case : S50VB
Unit : mm
RATINGS
● Absolute
Maximum Ratings
Item
Symbol
Conditions
Tstg
Storage Temperature
Tj
Operating Junction Temperature
V
RM
Maximum Reverse Voltage
I
O
50Hz sine wave, R-load, With heatsink, Tc=95℃
Average Rectified Forward Current
I
FSM
50Hz sine wave, Non-repetitive
1cycle
peak value, Tj=25℃
Peak Surge Forward Current
I
2
t
1ms≦t<10ms Tc=25℃
Current Squared Time
Vdis
Terminals to case, AC
1
minute
Dielectric Strength
TOR
(Recommended
torque : 0.6N½m)
Mounting Torque
● Electrical
Characteristics (Tc=25℃)
Item
Symbol
Conditions
V
F
I
F
=25A, Pulse measurement, Rating of per diode
Forward Voltage
I
R
V
R
=V
RM
, Pulse measurement, Rating of per diode
Reverse Current
Thermal Resistance
θjc
junction to case
 
Ratings Unit
-40½150
150
800
V
50
A
500
A
800
A
2
½
2
kV
0.8
N½m
Ratings Unit
Max.1.05 V
Max.10
μA
Max.0.5
℃/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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