P6SMB6.8A datasheet, PDF - EEWORLD Datasheet

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P6SMB6.8A: DescriptionTVS DIODE; CategoryDiscrete semiconductor diode; File Size82KB，2 Pages; ManufacturerCentral Semiconductor

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P6SMB6.8A Overview

TVS DIODE

P6SMB6.8A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	7.14 V
Minimum breakdown voltage	6.45 V
Breakdown voltage nominal value	6.8 V
Maximum clamping voltage	10.5 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-C2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5.8 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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N

EW

P6SMB6.8A

THRU

P6SMB200A

v

Central

DESCRIPTION

TM

Semiconductor Corp.

UNI-DIRECTIONAL

GLASS PASSIVATED JUNCTION

TRANSIENT VOLTAGE SUPPRESSOR

600 WATTS, 6.8 THRU 200 VOLTS

The CENTRAL SEMICONDUCTOR P6SMB6.8A

Series types are Surface Mount Uni-Directional

Glass Passivated Junction Transient Voltage

Suppressors designed to protect voltage sensitive

components from high voltage transients.

THIS

DEVICE IS MANUFACTURED WITH A GLASS

PASSIVATED CHIP FOR OPTIMUM

RELIABILITY.

Note: For Bi-directional devices, please refer to

the P6SMB6.8CA Series data sheet.

SMB CASE

d y

e b

eii

pcf

S

BREAKDOWN

VOLTAGE

MAXIMUM RATINGS

(TA=25°C )

Peak Power Dissipation

Peak Forward Surge Current (JEDEC Method)

Operating and Storage

Junction Temperature

ELECTRICAL CHARACTERISTICS

(TA=25°C )

BREAKDOWN VOLTAGE

WORKING

PEAK

TYPE NO.

VBR

@ IT

SYMBOL

PPM

IFSM

TJ,Tstg

600

100

-65 to +150

UNITS

W

A

°C

MAXIMUM

REVERSE

LEAKAGE

@R RWM

I V

mA

MAXIMUM

REVERSE

SURGE

I

CURRENT

RSM

MAXIMUM

REVERSE

VOLTAGE

VRSM

@ IRSM

MAXIMUM

TEMP.

COEFFICIENT

of VBR

MARKING

CODE

REVERSE

V

VOLTAGE

RWM

VOLTS

MIN

P6SMB6.8A

P6SMB7.5A

P6SMB8.2A

P6SMB9.1A

P6SMB10A

P6SMB11A

P6SMB12A

P6SMB13A

P6SMB15A

P6SMB16A

P6SMB18A

P6SMB20A

6.45

7.13

7.79

8.65

9.5

10.5

11.4

12.4

14.3

15.2

17.1

19.0

NOM

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

MAX

7.14

7.88

8.61

9.55

10.5

11.6

12.6

13.7

15.8

16.8

18.9

21.0

mA

10

1

VOLTS

5.8

6.4

7.02

7.78

8.55

9.4

10.2

11.1

12.8

13.6

15.3

17.1

A

57

53

50

45

41

38

36

33

28

27

24

22

VOLTS

10.5

11.3

12.1

13.4

14.5

15.6

16.7

18.2

21.2

22.5

25.2

27.7

%/°C

0.057

0.061

0.065

0.068

0.073

0.075

0.078

0.081

0.084

0.086

0.088

0.090

C6V8A

C7V5A

C8V2A

C9V1A

C10A

C11A

C12A

C13A

C15A

C16A

C18A

C20A

1000

500

200

50

10

5

414

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