V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
Dclink
=
=
=
=
=
=
2500
1500
10×10
3
1.45
0.90
1400
V
A
A
V
mΩ
V
Asymmetric Gate turn-off
Thyristor
5SGA 15F2502
Doc. No. 5SYA1214-02 Oct. 06
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Annular gate electrode
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Permanent DC voltage for
100 FIT failure rate
Characteristic values
Symbol Conditions
V
DRM
V
RRM
V
DC-link
Ambient cosmic radiation at sea level
in open air.
V
GR
≥
2 V
min
typ
max
2500
17
1400
Unit
V
V
V
Parameter
Repetitive peak off-state
current
Repetitive peak reverse
current
Symbol Conditions
I
DRM
I
RRM
V
D
= V
DRM
, V
GR
≥
2 V
V
R
= V
RRM
, R
GK
=
∞ Ω
min
typ
max
100
50
Unit
mA
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
H
m
D
s
D
a
Anode to Gate
Anode to Gate
± 0.1 mm
min
14
min
25.8
25
15
typ
15
typ
47
max
16
max
26.2
0.6
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SGA 15F2502
GTO Data
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
T(AV)M
I
T(RMS)
I
TSM
I
2
t
I
TSM
I
2
t
Symbol Conditions
V
T
V
(T0)
r
T
I
H
1)
min
typ
max
570
900
Unit
A
A
3
Half sine wave, T
C
= 85 °C
t
p
= 10 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
t
p
= 1 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
10×10
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
A
500×10
20×10
3
3
200×10
min
typ
max
2.8
1.45
0.90
50
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
I
T
= 1500 A, T
vj
= 125°C
T
vj
= 125°C
I
T
= 300...2000 A
T
vj
= 25°C
Turn-on switching
Maximum rated values
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Min. on-time
Symbol Conditions
di
T
/dt
cr
di
T
/dt
cr
t
on
T
vj
= 125°C,
I
T
= 1500 A, I
GM
= 30 A,
di
G
/dt = 20 A/µs
f = 200 Hz
f = 1 Hz
min
typ
max
400
600
Unit
A/µs
A/µs
µs
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
I
T
= 1500 A, di/dt = 100 A/µs,
I
GM
= 30 A, di
G
/dt = 20 A/µs,
C
S
= 3 µF, R
S
= 5
Ω
80
Characteristic values
Parameter
Turn-on delay time
Rise time
Turn-on energy per pulse
Symbol Conditions
t
d
t
r
E
on
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
I
T
= 1500 A, di/dt = 100 A/µs,
I
GM
= 30 A, di
G
/dt = 20 A/µs,
C
S
= 3 µF, R
S
= 5
Ω
min
typ
max
2
4
0.5
Unit
µs
µs
J
Turn-off switching
Maximum rated values
1)
Parameter
Max. controllable turn-off
current
Min. off-time
Symbol Conditions
I
TGQM
t
off
V
DM
≤
V
DRM
, di
GQ
/dt = 30 A/µs,
C
S
= 3 µF, L
S
≤
0.3 µH
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
V
DM
≤
V
DRM
, di
GQ
/dt = 30 A/µs,
I
TGQ
= I
TGQM
,
R
S
= 5
Ω,
C
S
= 3 µF, L
S
= 0.3 µH
min
typ
max
1500
Unit
A
µs
80
Characteristic values
Parameter
Storage time
Fall time
Turn-on energy per pulse
Peak turn-off gate current
Symbol Conditions
t
S
t
f
E
off
I
GQM
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
V
DM
≤
V
DRM
, di
GQ
/dt = 30 A/µs,
I
TGQ
= I
TGQM
,
R
S
= 5
Ω,
C
S
= 3 µF, L
S
= 0.3 µH
min
typ
max
15
2
2
480
Unit
µs
µs
J
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1214-02 Oct. 06
page 2 of 9
5SGA 15F2502
Gate
Maximum rated values
1)
Parameter
Repetitive peak reverse
voltage
Repetitive peak reverse
current
Characteristic values
Symbol Conditions
V
GRM
I
GRM
V
GR
= V
GRM
min
typ
max
17
20
Unit
V
mA
Parameter
Gate trigger voltage
Gate trigger current
Symbol Conditions
V
GT
I
GT
1)
min
typ
1.5
1.5
max
Unit
V
A
T
vj
= 25°C,
V
D
= 24 V, R
A
= 0.1
Ω
Thermal
Maximum rated values
Parameter
Junction operating temperature
Storage temperature range
Characteristic values
Symbol
T
vj
T
stg
Symbol
R
th(j-c)
R
th(j-c)A
R
th(j-c)C
Conditions
min
0
0
typ
max
125
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Parameter
Thermal resistance junction to case
Conditions
Double side cooled
Anode side cooled
Cathode side cooled
Single side cooled
Double side cooled
min
typ
max
27
49
60
16
8
Thermal resistance case to heatsink
(Double side cooled)
R
th(c-h)
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j - c)
(t) =
∑
R
i
(1 - e
- t/
τ
i
)
i
=
1
2
5.051
0.0950
i
R
i
(K/kW)
τ
i
(s)
1
14.570
0.4610
3
7.285
0.0120
4
0.097
0.0010
Fig. 1
Transient thermal impedance, junction to case
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1214-02 Oct. 06
page 3 of 9
5SGA 15F2502
Max. on-state characteristic model:
Max. on-state characteristic model:
V
T25
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
A
25
-3
178.9×10
Valid for i
T
= 300 – 2000 A
B
25
C
25
-6
-3
816.7×10
356.4×10
D
25
-3
-41.7×10
V
T125
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
Valid for i
T
= 300 – 2000 A
A
125
-3
11.7×10
B
125
-6
630.8×10
C
125
-3
340.2×10
D
125
-3
-22.0×10
Fig. 2
On-state characteristics
Fig. 3
Surge current and fusing integral vs. pulse
width
Fig. 4
Forward blocking voltage vs. gate-cathode
resistance
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1214-02 Oct. 06
page 4 of 9
5SGA 15F2502
Fig. 5
Static dv/dt capability; forward blocking voltage
vs. neg. gate voltage or gate cathode
resistance
Fig. 6
Forward gate current vs. forward gate voltage
Fig. 7
Gate trigger current vs. junction temperature
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1214-02 Oct. 06
page 5 of 9
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