Shantou Huashan Electronic Devices Co.,Ltd.
HFP740
N-Channel Enhancement Mode Field Effect Transistor
█
General Description
This Power MOSFET is produced using advanced planar stripe, DMOS
technology. This latest technology has been especially designed to minimize
on-state resistance, have a high rugged avalanche characteristics. This
devices is specially well suited for half bridge and full bridge resonant
topolgy like a electronic lamp ballast.
TO-220
1- G 2-D 3-S
█
Features
10A, 400V, R
DS
(on)
<0.55Ω@V
GS
= 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF740
•
█
Maximum Ratings
（Ta=25
℃
unless otherwise specified）
T
stg
——Storage
Temperature ------------------------------------------------------
-55~150℃
T
j
——Operating
Junction Temperature -------------------------------------------------- 150℃
V
DSS
——
Drain-Source Voltage ----------------------------------------------------------400V
V
DGR
——
Drain-Gate Voltage (R
GS
=20kΩ) ------------------------------------------------------------ 400V
V
GSS
——
Gate-Source Voltage --------------------------------------------------------------------------
±
20V
I
D
——
Drain Current (Continuous) --------------------------------------------------------------------- 10A
P
D
——
Maximum Power Dissipation --------------------------------------------------------------- 125W
I
AR
——
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 10 A
E
AS
——
Single Pulse Avalanche Energy
(starting Tj = 25℃, I
D
= I
AR
, V
DD
= 50 V) --------------------------------------------------- 450 mJ
E
AR
——
Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ
█
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.0
Max 62.5
Typ
0.5
Unit
℃/W
℃/W
℃/W
Shantou Huashan Electronic Devices Co.,Ltd.
HFP740
█
Electrical Characteristics
（Ta=25
℃
unless otherwise specified）
Symbol
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate – Body Leakage
2.0
9.6
1800
195
45
50
170
260
180
53
7
17
10
40
2.0
400
25
250
±
100
4.0
0.55
V
µA
µA
nA
V
I
D
=250µA ,V
GS
=0V
V
DS
=400V, V
GS
=0V
V
DS
=320V, V
GS
=0V,Tj=125
℃
V
GS
=
±
20V , V
DS
=0V
V
DS
= V
GS
, I
D
=250µA
V
GS
=10V, I
D
=5A
V
DS
=40V, I
D
=5A
(Note 1)
Items
Min.
Typ.
Max.
Unit
Conditions
On Characteristics
Gate Threshold Voltage
V
GS(th)
R
DS(on)
g
FS
Ciss
Coss
Crss
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Rise Time
Turn - Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Ω
S
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
A
A
V
Dynamic Characteristics and Switching Characteristics
V
DS
= 25 V, V
GS
= 0V,
f = 1.0 MHz
t
d(on)
tr
t
d(off)
t
f
Qg
Qgs
Qgd
V
DD
= 200 V, I
D
= 10Apk
R
G
= 25
Ω
(Note 1,2)
V
DS
=0.8V
DSS
, ID=10A,
V
GS
= 10 V
(Note 1,2)
Drain-Source Diode Characteristics and Maximun Ratings
Continuous Source–Drain Diode
I
S
Forward Current
Pulsed
Drain-Source
Diode
I
SM
Forward Current
Source–Drain Diode Forward
V
SD
On–Voltage
Notes:
1. Pulse Test: Pulse width≤300μS,Duty
cycle≤2%
2. Essentially independent of operating temperature
I
S
=10A,V
GS
=0
京公网安备 11010802033920号
EEWORLD
