Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
∗
Simplifies Circuit Design
∗
Reduces Board Space
∗
Reduces Component Count
∗
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
∗
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
PIN1
base
(Input)
R1
R2
PIN2
Emitter
(Ground)
PIN3
Collector
(output)
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 25°C
(1)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
200
1.6
Value
625
–65 to +150
260
10
R1 (K)
10
22
47
10
10
4.7
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Unit
°C/W
°C
°C
Sec
R2 (K)
10
22
47
47
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
θJA
T
J
, T
stg
T
L
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
(2)
MMUN2216RLT1
(2)
Marking
A8A
A8B
A8C
A8D
A8E
A8F
MMUN2230RLT1
(2)
A8G
1
(2)
A8H
2.2
MMUN2231RLT1
(2)
MMUN2232RLT1
A8J
4.7
(2)
MMUN2233RLT1
A8K
4.7
MMUN2234RLT1
(2)
A8L
22
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
1
2.2
4.7
47
47
8 8
Q2–1/8
MMUN2211RLT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
I
CBO
I
CEO
I
EBO
Min
-
-
-
-
-
-
-
-
-
-
-
-
V
(BR)CBO
V
(BR)CEO
h
FE
-
50
50
35
60
80
80
160
160
3.0
8.0
15
80
V
CE(sat)
80
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
100
140
140
350
350
5.0
15
30
200
150
-
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
Vdc
Vdc
Vdc
Unit
nAdc
nAdc
mAdc
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
MMUN2211RLT1
(V
EB
= 6.0 V, I
C
= 0)
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
Collector-Base Breakdown Voltage (I
C
=10mA, I
E
=0)
Collector-Emitter Breakdown Voltage
(3)
(I
C
=2.0mA, I
B
=0)
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
(3)
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
(I
C
= 10 mA, I
B
= 5 mA) MMUN2230RLT1 MMUN2231RLT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2215RLT1 MMUN2216RLT1
MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1
Output Voltage (on)
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0kΩ)
MMUN2211RLT1
MMUN2212RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0kΩ)
Output Voltage(off)(V
CC
=5.0V,V
B
=0.5V, R
L
=1.0kΩ)
(V
CC
=5.0V,V
B
=0.050V, R
L
=1.0kΩ)
MMUN2230RLT1
(V
CC
=5.0V,V
B
=0.25V, R
L
=1.0kΩ)
MMUN2215RLT1
MMUN2216RLT1
MMUN2233RLT1
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
MMUN2234RLT1
MMUN2213RLT1
V
OL
-
-
-
-
-
-
-
-
-
-
-
V
OH
4.9
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
-
Vdc
Vdc
Q2–2/8
MMUN2211RLT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
(3)
Min
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
—
0.8
0.055
0.38
Typ
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
—
1.0
0.1
0.47
Max
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
—
1.2
0.185
0.56
Unit
k
Ω
ON CHARACTERISTICS
Input Resistor
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1 MMUN2216RLT1
MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1
R1
Resistor Ratio
R1/R2
MMUN2233RLT1
MMUN2234RLT1
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
Q2–3/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211RLT1
P
D
, POWER DISSIPATION (MILLIWATTS)
250
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
=10
T
A
= –25°C
0.1
200
150
25°C
75°C
100
0.01
50
R
θJA
= 625°C/W
0
–50
0
50
10
150
0.001
0
20
40
60
80
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
h
FE
, DC CURRENT GAIN (NORMALIZED)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
1000
4
V
CE
= 10 V
f = 1 MHz
T
A
=75°C
25°C
–25°C
100
C ob , CAPACITANCE (pF)
3
l
E
= 0 V
T
A
= 25°C
2
1
10
1
10
100
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
25°C
10
I
C
, COLLECTOR CURRENT (mA)
10
T
A
= –25°C
V
in
, INPUT VOLTAGE (VOLTS)
75°C
V
O
= 0.2 V
T
A
= –25°C
25°C
75°C
1
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
V
O
= 5 V
8
9
10
0.1
0
10
20
30
40
50
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
Figure 6. V
CE(sta)
versus I
C
Q2–4/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212RLT1
h
FE
, DC CURRENT GAIN (NORMALIZED)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
1000
I
C
/I
B
=10
V
CE
= 10 V
T
A
=75°C
25°C
–25°C
T
A
= –25°C
25°C
0.1
75°C
100
0.01
0.001
0
20
40
60
80
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
versus I
C
4
100
Figure 8. DC Current Gain
75°C
25°C
T
A
= –25°C
I
C
, COLLECTOR CURRENT (mA)
C ob , CAPACITANCE (pF)
f = 1 MHz
l
E
= 0 V
3
10
T
A
= 25°C
1
2
0.1
1
0.01
0.001
0
1
2
3
4
5
6
7
8
V
O
= 5 V
9
10
0
0
10
20
30
40
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
in
, INPUT VOLTAGE (VOLTS)
V
O
= 0.2 V
T
A
= –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Q2–5/8
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