D
S
G
D
S
G
S
SO
27
-2
T
APT10026JN 1000V 33A 0.26
Ω
"UL Recognized" File No. E145592 (S)
ISOTOP
®
POWER MOS IV
®
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
1
SINGLE DIE ISOTOP
®
PACKAGE
All Ratings: T
C
= 25°C unless otherwise specified.
APT
10026JN
UNIT
Volts
Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000
33
132
±30
690
5.52
-55 to 150
300
and Inductive Current Clamped
Volts
Watts
W/°C
°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
µA)
On State Drain Current
2
MIN
APT10026JN
TYP
MAX
UNIT
Volts
1000
I
D
(ON)
APT10026JN
33
Amps
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
=
±30V,
V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 5.0mA)
2
R
DS
(ON)
APT10026JN
0.26
Ohms
I
DSS
I
GSS
V
GS
(TH)
250
1000
±100
2
4
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘCS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
UNIT
°C/W
050-0038 Rev F
0.18
0.05
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT10026JN
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6Ω
MIN
TYP
MAX
UNIT
11610
1345
415
465
83
61
21
19
70
14
14000
1880
620
700
125
90
40
40
105
30
ns
nC
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
1
MIN
APT10026JN
TYP
MAX
UNIT
33
132
1.8
1250
49
2000
70
Amps
APT10026JN
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Volts
ns
µC
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
PACKAGE CHARACTERISTICS
Symbol
L
D
L
S
V
Isolation
C
Isolation
Torque
Characteristic / Test Conditions
Internal Drain Inductance
(Measured From Drain Terminal to Center of Die.)
Internal Source Inductance
(Measured From Source Terminals to Source Bond Pads)
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
(f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
MIN
TYP
MAX
UNIT
nH
Volts
3
5
2500
70
13
pF
lb•in
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
0.2
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.1
0.05
D=0.5
0.2
0.1
0.01
0.005
0.05
Note:
PDM
0.02
0.01
t1
t2
050-0038 Rev F
0.001
0.0005
10
-5
SINGLE PULSE
10
-4
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT10026JN
80
VGS=6, 8, 10, 15V
I
D
, DRAIN CURRENT (AMPERES)
60
5.5V
I
D
, DRAIN CURRENT (AMPERES)
60
80
VGS=6, 8, 10, 15V
5.5V
40
5V
40
5V
20
4.5V
20
4.5V
4V
0
100
200
300
400
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
TJ = -55°C
I
D
, DRAIN CURRENT (AMPERES)
80
TJ = +25°C
TJ = +125°C
0
0
4V
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
3.0
TJ = 25°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
= 10V @ 0.5 I [Cont.]
GS
D
2.5
60
2.0
VGS=10V
40
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.5
VGS=20V
1.0
20
TJ = +125°C
TJ = +25°C
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
35
I
D
, DRAIN CURRENT (AMPERES)
30
25
20
15
10
5
0
0
0.5
0
20
40
60
80
160
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.1
1.0
0.9
0.8
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
I = 0.5 I [Cont.]
D
D
25
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
0.7
-50
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6
050-0038 Rev F
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4
-50
APT10026JN
200
I
D
, DRAIN CURRENT (AMPERES)
100
50
OPERATION HERE
LIMITED BY RDS (ON)
50,000
10µS
100µS
C, CAPACITANCE (pF)
10,000
5,000
Coss
1,000
500
Crss
Ciss
10
5
1mS
10mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
.1
1
5 10
50 100
500 1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
.1
.5
1
5
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
400
100
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
VDS=100V
VDS=200V
VDS=500V
12
16
100
50
TJ =+150°C
TJ =+25°C
TJ =-55°C
8
10
5
4
200
400
600
800
1000
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
1.95 (.077)
2.14 (.084)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
050-0038 Rev F
Gate
Dimensions in Millimeters and (Inches)
ISOTOP
®
is a Registered Trademark of SGS Thomson.
京公网安备 11010802033920号
EEWORLD
