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BCR108

Description
npn silicon digital transistor (switching circuit, inverter, interface circuit, driver circuit
CategoryDiscrete semiconductor    The transistor   
File Size36KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BCR108 Overview

npn silicon digital transistor (switching circuit, inverter, interface circuit, driver circuit

BCR108 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 21.3636
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
VCEsat-Max0.3 V
Base Number Matches1
BCR 108
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
=2.2kΩ, R
2
=47kΩ)
Type
BCR 108
Marking Ordering Code
WHs
Q62702-C2253
Pin Configuration
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation,
T
S
= 102°C
Junction temperature
Storage temperature
Symbol
Values
50
50
5
10
100
200
150
- 65 ... + 150
mA
mW
°C
Unit
V
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Thermal Resistance
Junction ambient
1)
R
thJA
R
thJS
350
240
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group
1
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