TMG16C80H datasheet, PDF - EEWORLD Datasheet

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TMG16C80H: DescriptionTRIAC, 800V V(DRM), 16A I(T)RMS; CategoryAnalog mixed-signal IC Trigger device; File Size470KB，2 Pages; ManufacturerSanRex; Websitehttp://www.ecomallbiz.com/sanrex; Environmental Compliance

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TMG16C80H Overview

TRIAC, 800V V(DRM), 16A I(T)RMS

TMG16C80H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1221211057
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	7.3
Critical rise rate of commutation voltage - minimum value	10 V/us
Maximum DC gate trigger current	30 mA
Maximum DC gate trigger voltage	1.5 V
Maximum leakage current	2 mA
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Maximum rms on-state current	16 A
Off-state repetitive peak voltage	800 V
surface mount	YES
Trigger device type	TRIAC

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TRIAC

(Surface Mount Device / Non-isolated)

TMG16C80H

Triac

TMG16C80H

is designed for full wave AC control applications.

It can be used as an ON/OFF function or for phase control operation.

Typical Applications

（0.9）

TO-263

（7.0）

（4.0）

9.2

0.3

±

1.4

0.5

±

2.36

0.15

±

Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro

Wave Ovens, Hair Dryers, other control applications

●

Industrial Use

: SMPS, Copier Machines, Motor Controls, Dimmer, SSR,

Heater Controls, Vending Machines, other control

applications

●

10

0.3

±

（0.4）

（6.91）

2

4.5

0.2

±

1.3

0.2

±

（

RO

2×

.4

5）

2

10.4

0.3

±

1

2

3

1

2.4

0.2

±

Features

4.9

0.5

±

3

1.27

0.2

±

I

T(RMS)

=16A

●

High Surge Current

●

Low Voltage Drop

●

Lead-Free Package

●

2.54

0.15

±

0.8

0.15

±

2.54

0.25

±

5.08

0.5

±

0.5

0.15

±

2.5

0.2

±

2

1 T1

2 T2

3 Gate

Identifying Code：T16C8H

Unit：

mm

■Maximum

Ratings

Symbol

V

DRM

（

I

T RMS）

I

TSM

I

2

t

P

GM

（AV）

P

G

I

GM

V

GM

Tj

Tstg

Item

Repetitive Peak Off-State Voltage

R.M.S. On-State Current

Surge On-State Current

I

2

t（for fusing）

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage

Operating Junction Temperature

Storage Temperature

Mass

Reference

（Tj=25℃

unless otherwise specified）

Tc＝98℃

One cycle, 50Hz/60Hz, Peak value non-repetitive

Ratings

800

16

155/170

120

5

0.5

2

10

−40∼＋125

−40∼＋150

1.2

Unit

V

A

2

S

W

A

V

℃

g

■Electrical

Characteristics

Symbol

I

DRM

V

TM

＋

I

GT1

−

I

GT1

＋

I

GT3

−

I

GT3

＋

V

GT1

−

V

GT1

＋

V

GT3

−

V

GT3

V

GD

〔dv

/

dt〕

c

I

H

Rth

Item

Repetitive Peak Off-State Current

Peak On-State Voltage

1

2

Gate Trigger Current

3

4

1

2

Gate Trigger Voltage

3

4

Non-Trigger Gate Voltage

Critical Rate of Rise of Off-State

Voltage at Commutation

Reference

V

D

=V

DRM

, Single phase, half wave, Tj＝125℃

I

T

＝25A,

Inst. measurement

V

D

＝6V，R

L

＝10Ω

Tj＝125℃，V

D

＝

1 2

V

DRM

／

Tj＝125℃，

/

dt〕

〔di

c＝−8A

/

ms，V

D

＝400V

Junction to case

Ratings

Min. Typ. Max.

2

1.4

30

―

30

1.5

―

1.5

0.2

10

25

1.4

Unit

mA

V

mA

V

/

μs

mA

℃

/

W

Holding Current

Thermal Resistance

Trigger mode of the triac

Mode

1

I

（

＋

）

Mode

2

I

）

（

−

Mode

3 III

（

＋

）

Mode

4 III ）

（

−

SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com

（7.2）

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