IS205X3,2,1
IS205-3,2,1
LOW INPUT CURRENT NON-BASE
LEAD PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATOR
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
VDE 0884 in 3 available lead forms : -
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- STD
-
G form
-
SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
DESCRIPTION
The IS205-3, -2, -1 series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard 6
pin dual in line plastic package with the base pin
unconnected.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Low input current 0.5mA I
F
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High Current Transfer Ratio (50% min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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Basepin unconnected for improved noise
immunity in high EMI environment
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
2.54
7.0
6.0
1.2
7.62
6.62
1
2
3
Dimensions in mm
6
5
4
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
10V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
70V
6V
160mW
7.62
1.2
0.6
10.2
9.5
1.4
0.9
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
30/7/97
DB90029-AAS/A2
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
IS205-3
MIN TYP MAX UNITS
1.2
10
10
70
6
50
1.4
V
V
µA
V
V
nA
TEST CONDITION
I
F
= 20mA
I
R
= 10µA
V
R
= 10V
I
C
= 1mA
I
E
= 100µA
V
CE
= 10V
0.5mA I
F
, 0.4V V
CE
1.0mA I
F
, 0.4V V
CE
0.5mA I
F
, 0.4V V
CE
1.0mA I
F
, 0.4V V
CE
0.5mA I
F
, 0.35mA I
C
0.5mA I
F
, 0.25mA I
C
1.0mA I
F
, 0.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 0.2mA,R
L
= 100Ω
Output
Coupled
70
100
50
%
%
%
%
V
V
V
V
RMS
V
PK
Ω
µs
µs
IS205-2
IS205-1
50
Collector-emitter SaturationVoltage -3
-2
-1
Input to Output Isolation Voltage V
IS0
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
4
Output Fall Time tf
3
0.4
0.4
0.4
18
18
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
30/7/97
DB90029-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
2.0
150
Collector current I
C
(mA)
1.6
Collector Current vs. Low
Collector-emitter Voltage
T
A
= 25°C
I
F
= 1mA
1.2
0.8
I
F
= 0.5mA
0.4
0
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
Relative current transfer ratio
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
Current transfer ratio CTR (%)
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
30/7/97
0
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage V
CE
( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
I
F
= 1mA
V
CE
= 0.4V
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Current Transfer Ratio vs. Forward Current
120
Collector-emitter saturation voltage V
CE(SAT)
(V)
I
F
= 1mA
I
C
= 0.5mA
100
80
60
40
20
0
0.1
0.2
0.5
1
2
5
Forward current I
F
(mA)
DB90029-AAS/A2
V
CE
= 0.4V
T
A
= 25°C
MCU
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