DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5737
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Low voltage operation, low phase distortion
• Ideal for VCO applications
• Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
2SC5737
2SC5737-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5
3
2
30
90
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15438EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP(K)
Printed in Japan
©
2001
2SC5737
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
2
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 10 mA
–
–
70
–
–
–
100
100
140
nA
nA
–
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
10.0
7.0
–
–
12.0
9.0
1.5
0.4
–
–
2.0
0.8
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
UD
70 to 140
2
Data Sheet P15438EJ1V0DS
2SC5737
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
150
100
90
50
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
V
CE
= 1 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
V
CE
= 2 V
20
20
10
10
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
Collector Current I
C
(mA)
300
µ
A
270
µ
A
240
µ
A
210
µ
A
180
µ
A
150
µ
A
120
µ
A
90
µ
A
60
µ
A
I
B
= 30
µ
A
25
20
15
10
5
0
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
Data Sheet P15438EJ1V0DS
3
Embedded System
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