is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
SVFR
• Faster Switching
• Lower Leakage
• Fast Recovery Body Diode
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
• Avalanche Energy Rated
• TO-247 or Surface Mount D
3
Pak
G
D
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT4012BVFR_SVFR
UNIT
Volts
Amps
400
37
148
±30
±40
370
2.96
-55 to 150
300
37
30
4
1
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
400
37
0.12
250
1000
2
4
±100
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
1-2006
050-7271 Rev B
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
APT Website - http://www.advancedpower.com
nA
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT4012BVFR_SVFR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 200V
I
D
= 37A @ 25°C
V
GS
= 15V
V
DD
= 200V
I
D
= 37A @ 25°C
R
G
= 1.6Ω
MIN
TYP
MAX
UNIT
pF
4500
690
290
195
25
90
14
17
55
12
ns
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
V/ns
ns
37
148
1.3
15
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Body Diode)
(V
GS
= 0V, I
S
= -37A)
5
Peak Diode Recovery
dv
/
dt
Reverse Recovery Time
(I
S
= -37A,
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -37A,
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -37A,
di
/
dt
= 100A/µs)
t
rr
Q
rr
I
RRM
250
525
1.6
6.0
13
21
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.34
40
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 1.90mH, R = 25Ω, Peak I = 37A
temperature.
j
G
L
2
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv
/
numbers reflect the limitations of the test circuit rather than the
dt
device itself.
IS
≤
-
ID
Cont.
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
[
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
Repetitive Rating: Pulse width limited by maximum junction
0.4
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.1
0.05
0.2
0.1
0.05
PDM
1-2006
0.01
0.005
0.02
0.01
Note:
t1
t2
050-7271 Rev B
SINGLE PULSE
0.001
10
-5
Duty Factor D = t1/t
2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
Typical Performance Curves
100
7V
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
APT4012BVFR_SVFR
100
VGS=15V
80
VGS=10V
6.5V
60
7V
VGS=10V & 15V
80
6.5V
60
6V
6V
40
5.5V
5V
40
5.5V
5V
20
4.5V
0
40
80
120
160
200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
20
4.5V
0
4
8
12
16
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
TJ = +125°C
1.5
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
80
1.4
1.3
1.2
60
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
40
1.1
1.0
0.9
20
TJ = +125°C
0
TJ = +25°C
TJ = -55°C
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
40
I
D
, DRAIN CURRENT (AMPERES)
0
20
40
60
80
100
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
30
1.05
20
1.00
10
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
25
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
0.90
-50
2.5
I = 0.5 I [Cont.]
D
D
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
GS
= 10V
2.0
1.1
1.0
0.9
0.8
0.7
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
050-7271 Rev B
1-2006
APT4012BVFR_SVFR
200
100
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10µS
100µS
C, CAPACITANCE (pF)
15,000
10,000
5,000
Ciss
50
1mS
10
5
10mS
100mS
DC
Coss
1,000
Crss
500
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
5 10
50 100
400
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
100
50
TJ =+150°C
TJ =+25°C
16
VDS=80V
VDS=200V
12
VDS=320V
8
10
5
4
50
100 150 200 250 300 350
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
TO-247 (BVFR) Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK (SVFR) Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
1-2006
0.40 (.016)
0.79 (.031)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
3.81 (.150)
4.06 (.160)
(Base of Lead)
050-7271 Rev B
Gate
Drain
Source
Heat Sink (Drain)
and Leads
are Plated
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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