e
PTB 20258
6 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20258 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
6 Watts, 915–960 MHz
Class AB Characteristics
50% Typ Collector Efficiency at 6 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Typical Output Power and Efficiency vs. Input Power
8
Output Power
80
68
Efficiency
4
Output Power (Watts)
Efficiency (%)
6
56
44
32
20
20
25
8
LO
TC
OD
E
V
CC
= 25 V
2
I
CQ
= 27 mA
f = 960 MHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
Input Power (Watts)
Package 20208
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Tstg
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
60
4.0
1.7
22
0.125
-40 to +150
8
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
7-21-98
PTB 20258
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 50 mA
V
BE
= 0 V, I
C
= 50 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
28
60
3.5
20
Typ
29
70
5
50
Max
—
—
—
120
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 25 Vdc, Pout = 6 W, I
CQ
= 27 mA, f = 960 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 6 W, I
CQ
= 27 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 6 W, I
CQ
= 27 mA,
f = 960 MHz—all phase angles at frequency of test)
Symbol
G
pe
η
C
Ψ
Min
10
—
—
Typ
11
50
—
Max
—
—
30:1
Units
dB
%
—
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
13
Output Power
(at P-1dB)
vs. Supply Voltage
9
Output Power (Watts)
V
CC
= 25 V
12
8
7
6
5
4
3
I
CQ
= 27 mA
P
OUT
= 6 W
Gain (dB)
I
CQ
= 27 mA
f = 960 MHz
11
10
9
700
750
800
850
900
950
1000
1050
20
22
24
26
28
Frequency (MHz)
Supply Voltage (Volts)
2
7-21-98
e
Power Gain vs. Output Power
16
14
12
10
PTB 20258
I
CQ
= 27 mA
I
CQ
= 41 mA
Power Gain (dB)
I
CQ
= 7 mA
8
6
0.10
I
CQ
= 14 mA
V
CC
= 25V
f = 960 MHz
1.00
10.00
Output Power (W)
Impedance Data
(V
CC
= 25 Vdc, Pout = 6 W, I
CQ
= 27 mA)
Z
0
= 50
Ω
Z Source
Z Load
Frequency
MHz
1000.00
980.00
960.00
950.00
915.00
900.00
850.00
800.00
750.00
R
3.02
3.10
3.19
3.29
3.79
3.60
3.87
3.90
4.15
Z Source
jX
-1.05
-1.22
-1.35
-1.55
-1.95
-2.06
-2.04
-2.66
-3.00
R
88.10
9.04
9.06
9.20
9.50
10.10
11.67
12.60
13.80
Z Load
jX
12.00
13.00
14.10
14.36
15.98
16.83
17.20
17.80
18.87
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change
without notice.
L1
© 1998 Ericsson Inc.
EUS/KR 1301-PTB 20258 Rev. A 07-21-98
3
Programming Basics
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