APM2522NU
N-Channel Enhancement Mode MOSFET
Features
•
25V/30A,
R
DS(ON)
=15mΩ (typ.) @ V
GS
=10V
R
DS(ON)
=22mΩ (typ.) @ V
GS
=4.5V
Pin Description
3
1
2
•
•
•
•
Super High Dense Cell Design
Avalanche Rated
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Pin 3
D
Applications
•
Power Management in Desktop Computer or
DC/DC Converters
Pin 1
G
S
Pin 2
Ordering and Marking Information
APM2522N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM2522N U :
APM2522N
XXXXX
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
www.anpec.com.tw
APM2522NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
25
±20
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
20
100
70
30
*
Unit
Common Ratings
(T
A
= 25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300µs Pulse Drain Current Tested
V
°C
°C
A
A
Mounted on Large Heat Sink
I
D
P
D
R
θJC
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
2
20
50
20
2.5
A
W
°C/W
Mounted on PCB of 1in Pad Area
I
D
P
D
R
θJA
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
9
6
2.5
1
50
7
4
1.5
0.5
75
°C/W
°C/W
W
°C/W
A
Mounted on PCB of Minimum Footprint
I
D
P
D
R
θJA
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
A
Notes：
* Current limited by bond wire.
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
2
www.anpec.com.tw
APM2522NU
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C)
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
GS
=0V, I
DS
=250µA
V
DS
=20V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
V
GS
=4.5V, I
DS
=10A
I
SD
=10A, V
GS
=0V
I
SD
=10A, dI
SD
/dt =100A/µs
25
1
30
1
1.5
15
22
0.7
50
3
2.5
±100
20
28
1.1
V
µA
V
nA
mΩ
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Characteristics
a
V
SD
Diode Forward Voltage
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
b
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
2
825
125
85
13
24
35
57
10
19
31
5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
b
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
ns
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Drain Charge
17
V
DS
=15V, V
GS
=10V,
I
DS
=20A
2
5
24
nC
Gate-Source Charge
Notes:
a : Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
3
www.anpec.com.tw
APM2522NU
Typical Characteristics
Power Dissipation
60
Drain Current
35
30
25
20
15
10
5
50
40
30
20
10
T
C
=25 C
0
20 40 60 80 100 120 140 160 180
o
I
D
- Drain Current (A)
P
tot
- Power (W)
0
0
T
C
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
300
100
Thermal Transient Impedance
2
1
Normalized Effective Transient
Duty = 0.5
0.2
0.1
0.05
I
D
- Drain Current (A)
it
im
)L
(on
ds
R
1ms
10ms
100ms
1s
DC
10
0.1
0.01
0.02
1
Single Pulse
0.1
0.1
T
C
=25 C
o
1
10
70
0.01
1E-4
Mounted on 1in pad
o
R
θ
JA
:50 C/W
2
1E-3
0.01
0.1
1
10
100
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
4
www.anpec.com.tw
APM2522NU
Typical Characteristics (Cont.)
Output Characteristics
60
V
GS
= 5,6,7,8,9,10V
50
4V
35
Drain-Source On Resistance
I
D
- Drain Current (A)
3.5V
40
R
DS(ON)
- On - Resistance (mΩ)
30
25
V
GS
= 4.5V
30
3V
20
20
V
GS
=10V
15
10
2.5V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5
0
5
10
15
20
25
30
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
30
28
I
D
=20A
Gate Threshold Voltage
1.6
I
DS
=250
µ
A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
R
DS(ON)
- On - Resistance (mΩ)
26
24
22
20
18
16
14
12
10
1
2
3
4
5
6
7
8
9
10
Normalized Threshold Vlotage
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
5
www.anpec.com.tw
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