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3EZ110

Description
glass passivated junction silicon zener diode
File Size280KB,5 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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3EZ110 Overview

glass passivated junction silicon zener diode

3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES
l
l
l
l
l
l
l
l
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
Typical I
D
less than 1 A above 11V
High temperature soldering :
DO-15
260 /10 seconds at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.015 ounce, 0.04 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
NOTES:
A. Mounted on 5.0mm
2
(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
SYMBOL
P
D
I
FSM
T
J
,T
STG
VALUE
3
24
15
-55 to +150
UNITS
Watts
mW/
Amps

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3EZ110 3EZ11 3EZ100 3EZ120 3EZ12
Description glass passivated junction silicon zener diode glass passivated junction silicon zener diode glass passivated junction silicon zener diode glass passivated junction silicon zener diode glass passivated junction silicon zener diode
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