CNY17F-1X, CNY17F-2X, CNY17F-3X, CNY17F-4X
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P01102464
Fimko - Certificate No. FI18166
Semko - Reference No. 0202037/01-22
Demko - Certificate No. 311158-01
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BSI approved - Cetificate No. 8001
DESCRIPTION
TheCNY17F-1,CNY17F-2,CNY17F-3,CNY17F-4
series of optically coupled isolators consist of
infrared light emitting diode and NPN silicon
photo transistor in a standard 6 pin dual in line
plastic package with the base pin unconnected.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High BV
CEO
(70V min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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Base pin unconnected for improved noise
immunity in high EMI environment
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
2.54
7.0
6.0
1.2
7.62
6.62
1
2
3
Dimensions in mm
6
5
4
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
70V
6V
160mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
11/2/03
DB92179m-AAS/A3
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( note 2 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
70
6
50
MIN TYP MAX UNITS
1.2
1.65
10
V
µ
A
TEST CONDITION
I
F
= 60mA
V
R
= 6V
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 10V
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
10mA I
F
, 2.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
V
nA
Coupled
Current Transfer Ratio (CTR) (Note 2)
CNY17F-1
40
CNY17F-2
63
CNY17F-3
100
CNY17F-4
160
CNY17F-1
13
CNY17F-2
22
CNY17F-3
34
CNY17F-4
56
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
80
125
200
320
0.4
%
%
%
%
%
%
%
%
V
V
RMS
V
PK
Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
TYPICAL SWITCHING CHARACTERISTICS
1.
Linear Operation
(
without saturation) Fig
1.
I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
Turn-on Time
Rise Time
Turn-off Time
Fall Time
Cut-off Frequency
t
on
t
r
t
off
t
f
F
CO
2.
Switching Operation (with saturation) Fig 2
V
CC
= 5V, R
L
= 1k
Ω
GROUP
Turn-on Time t
on
t
r
Rise Time
Turn-off Time t
off
t
f
Fall Time
V
CESAT
UNITS
3.0
2.0
2.3
2.0
250
µs
µs
µs
µs
kHz
-1
-4
-2 and -3
(I
F
=20mA) (I
F
=10mA) (I
F
=5mA)
3.0
2.0
18
11
4.2
3.0
23
14
< 0.4
6.0
4.6
25
15
UNITS
µs
µs
µs
µs
V
V
CC
= 5.0V
R
L
= 75Ω
OUTPUT
V
CC
= 5.0V
R
L
= 1kΩ
OUTPUT
INPUT
t
on
t
r
OUTPUT
10%
90%
10%
90%
t
off
t
f
FIG 1
11/2/03
FIG 2
DB92179m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
( normalised to CNY17F-3 )
50
T
A
= 25°C
150
Collector current I
C
(mA)
40
30
20
10
50
30
20
15
10
100
50
I
F
= 5mA
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
Current transfer ratio CTR (%)
70
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
-30
0
25
50
75
100
125
1
2
5
10
20
50
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
DB92179m-AAS/A3
V
CE
= 5V
T
A
= 25°C
CNY17F-4
Forward current I
F
(mA)
60
50
40
30
20
10
0
CNY17F-3
CNY17F-2
CNY17F-1
I
F
= 10mA
V
CE
= 5V
Collector-emitter saturation voltage V
CE(SAT)
(V)
Relative current transfer ratio
I
F
= 10mA
I
C
= 2.5mA
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
11/2/03
Embedded System
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