DSF8025SE
DSF8025SE
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4146-4.4
DS4146-5.0 January 2000
APPLICATIONS
s
Induction Heating
s
A.C. Motor Drives
s
Inverters And Choppers
s
Welding
s
High Frequency Rectification
s
UPS
KEY PARAMETERS
V
RRM
2500V
I
F(AV)
650A
I
FSM
7500A
Q
r
540
µ
C
t
rr
5.0
µ
s
FEATURES
s
Double side cooling
s
High surge capability
s
Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Conditions
DSF8025SE25
2500
DSF8025SE24
2400
DSF8025SE23
2300
DSF8025SE22
2200
DSF8025SE21
2100
DSF8025SE20
2000
Lower voltage grades available.
V
RSM
= V
RRM
+ 100V
Outline type code: E
See Package Details for further information.
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
650
1020
785
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
385
604
465
A
A
A
1/8
DSF8025SE
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
7.5
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
281 x 10
3
6.0
180 x 10
3
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 8.0kN
with mounting compound
On-state (conducting)
Double side
Single side
-
-
-
-
-55
7.0
0.094
0.018
0.036
150
175
9.0
o
Min.
dc
Anode dc
-
-
Max.
0.047
0.094
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 1000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
-
-
-
1.8
-
-
70
Max.
2.3
50
5.0
540
235
-
1.48
0.8
-
Units
V
mA
µs
µC
A
-
V
mΩ
V
2/8
DSF8025SE
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
CURVES
4000
Measured under pulse conditions
3500
3000
Instantaneous forward current I
F
- (A)
2500
2000
1500
T
j
= 150˚C
T
j
= 25˚C
1000
500
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage V
F
- (V)
Fig. 1 Maximum (limit) forward characteristics
3/8
DSF8025SE
500
Measured under pulse conditions
400
Instantaneous forward current I
F
- (A)
300
T
j
= 150˚C
200
T
j
= 25˚C
100
0
1.00
1.25
1.50
1.75
2.00
Instantaneous forward voltage V
F
- (V)
Fig. 2 Maximum (limit) forward characteristics
250
Current
waveform
V
FR
200
Transient forward votage V
FP
- (V)
Voltage
waveform
δy
δx
di =
δy
dt
δx
150
T
j
= 125˚C limit
100
T
j
= 25˚C limit
50
0
0
500
1000
1500
2000
Rate of rise of forward current dI
F
/dt - (A/µs)
Fig. 3 Transient forward voltage vs rate of rise of forward current
4/8
DSF8025SE
100000
I
F
Q
S
=
∫
50µs
0
Conditions:
T
j
= 150˚C,
QS
V
R
= 100V
Reverse recovered charge Q
S
- (µC)
10000
t
p
= 1ms
dI
R
/dt
I
RR
1000
I
F
= 2000A
I
F
= 1000A
I
F
= 200A
100
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/µs)
Fig. 4 Recovered charge
10000
10000
Conditions:
T
j
= 150˚C,
V
R
= 100V
Reverse recovery current I
RR
- (A)
1000
A
B
C
100
10
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 200A
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig. 5 Typical reverse recovery current vs rate of fall of forward current
5/8
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