time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION, Rev. 00A
08/01/02
1
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DEVICE OVERVIEW
The 128Mb SDRAM is a high speed CMOS, dynamic
random-access memory designed to operate in 2.5V V
DD
and 1.8V V
DDQ
or 3.3V
DD
and 3.3V V
DDQ
memory systems
containing 134,217 ,728 bits. Internally configured as a
quad-bank DRAM with a synchronous interface. Each
16,777,216-bit bank is organized as 4,096 rows by 256
columns by 16 bits.
The 128Mb SDRAM includes an AUTO REFRESH MODE,
and a power-saving, power-down mode. All signals are
registered on the positive edge of the clock signal, CLK. All
inputs and outputs are LVTTL compatible.
Only partials of the memory array can be selected for Self-
Refresh and the refresh period during Self-Refresh is
progammable in 4 steps which drastically reduces the self
refresh current, depending on the case temperature of the
components in the system application.
The 128Mb SDRAM has the ability to synchronously burst
data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks
ISSI
®
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during burst
access.
A self-timed row precharge initiated at the end of the burst
sequence is available with the AUTO PRECHARGE func-
tion enabled. Precharge one bank while accessing one of the
other three banks will hide the precharge cycles and provide
seamless, high-speed, random-access operation.
SDRAM read and write accesses are burst oriented starting at
a selected location and continuing for a programmed num-
ber of locations in a programmed sequence. The registra-
tion of an ACTIVE command begins accesses, followed by
a READ or WRITE command. The ACTIVE command in
conjunction with address bits registered are used to select
the bank and row to be accessed (BA0, BA1 select the
bank; A0-A11 select the row). The READ or WRITE
commands in conjunction with address bits registered are
used to select the starting column location for the burst
access.
Programmable READ or WRITE burst lengths consist of 1,
2, 4 and 8 locations or full page, with a burst terminate
option.
FUNCTIONAL BLOCK DIAGRAM
CLK
CKE
CS
RAS
CAS
WE
A11
DQM
COMMAND
DECODER
&
CLOCK
GENERATOR
DATA IN
BUFFER
16
16
MODE
REGISTER
11
REFRESH
CONTROLLER
I/O 0-15
SELF
REFRESH
CONTROLLER
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
11
DATA OUT
BUFFER
16
16
Vcc/Vcc
Q
GND/GNDQ
REFRESH
COUNTER
4096
4096
4096
4096
ROW DECODER
MULTIPLEXER
MEMORY CELL
ARRAY
11
ROW
ADDRESS
LATCH
11
ROW
ADDRESS
BUFFER
BANK 0
SENSE AMP I/O GATE
COLUMN
ADDRESS LATCH
8
256K
(x 16)
BANK CONTROL LOGIC
BURST COUNTER
COLUMN DECODER
COLUMN
ADDRESS BUFFER
8
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
PIN CONFIGURATIONS
54 pin TSOP - Type II for x8
ISSI
®
V
DD
I/O0
V
DD
Q
NC
I/O1
V
SS
Q
NC
I/O2
V
DD
Q
NC
I/O3
V
SS
Q
NC
V
DD
NC
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
I/O7
V
SS
Q
NC
I/O6
V
DD
Q
NC
I/O5
V
SS
Q
NC
I/O4
V
DD
Q
NC
V
SS
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
PIN DESCRIPTIONS
A0-A11
A0-A8, A10
BA0, BA1
I/O0 to I/O7
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
WE
DQM
V
DD
Vss
V
DDQ
Vss
Q
NC
Write Enable
x 8 Lower Bye, Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION Rev. 00A
06/01/02
3
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
PIN CONFIGURATIONS
54-Ball FBGA for x16
ISSI
7
8
9
®
1
2
3
4
5
6
A
Vss
B
I/O14
C
I/O12
D
I/O10
E
I/O8
F
UDQM
G
NC/A12
H
A8
J
Vss
A5
A4
A3
A2
Vss
A7
A6
A0
A1
A10
A11
A9
BA0
BA1
CS
CLK
CKE
CAS
RAS
WE
NC
Vss
VDD
LDQM
I/O7
I/O9
VDDQ
VssQ
I/O6
I/O5
I/O11
VssQ
VDDQ
I/O4
I/O3
I/O13
VDDQ
VssQ
I/O2
I/O1
I/O15
VssQ
VDDQ
I/O0
VDD
PIN DESCRIPTIONS
A0-A11
A0-A8, A10
BA0, BA1
DQ0 to DQ15
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
WE
LDQM
UDQM
V
DD
Vss
V
DDQ
Vss
Q
NC
Write Enable
x16 Lower Bye, Input/Output Mask
x16 Upper Bye, Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
PIN CONFIGURATIONS
54 pin TSOP - Type II for x16
ISSI
®
V
DD
I/O0
V
DD
Q
I/O1
I/O2
V
SS
Q
I/O3
I/O4
V
DD
Q
I/O5
I/O6
V
SS
Q
I/O7
V
DD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
I/O15
V
SS
Q
I/O14
I/O13
V
DD
Q
I/O12
I/O11
V
SS
Q
I/O10
I/O9
V
DD
Q
I/O8
V
SS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
PIN DESCRIPTIONS
A0-A11
A0-A8, A10
BA0, BA1
I/O0 to I/O15
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
WE
LDQM
UDQM
V
DD
Vss
V
DDQ
Vss
Q
NC
Write Enable
x16 Lower Bye, Input/Output Mask
x16 Upper Bye, Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
Integrated Silicon Solution, Inc. — www.issi.com —
When I receive data and enter the interrupt handler, I don't take out the data from FIFO. Can I still respond to the receive interrupt when FIFO is full?...
How to connect the ICSP interface of PIC16F676 and USB-ICD2.5?
I have been using 16F877, but 16F676 does not have PGD and PGC, only ICSPDAT and ICSPCLK.
Can we just treat ICSPDAT as PGD and ICSPCLK as...
What is the relationship between the serial port sending data and the clock source it selects? For example, if I choose ACLK and turn off the CPU SMCLK MCLK, can the serial port still send data? I don...
RT I am now implementing the GPRS function. Now I can establish a dial-up connection and use RasDial to dial a number. However, my boss requires both the data sending and the phone call function. Obvi...
[i=s]This post was last edited by lansebuluo on 2022-9-28 08:39[/i]The WIFI data receiver is mainly used to receive data sent by the temperature and humidity acquisition module, set the alarm value of...
In recent years, with the increasing demand for manufacturing and automated production management, industrial barcode scanners have gradually become an indispensable part of the industrial manufact...[Details]
How do you know if a machine is operating properly? The answer: by leveraging deep learning to detect anomalies in routine vibration data from industrial machines. Anomaly detection has many uses, ...[Details]
As the main model among new energy vehicles, pure electric vehicles have received strong support and encouragement from the country in recent years, and their development is changing with each pass...[Details]
Recently, South Korean robotics giant WIRobotics launched its first general-purpose humanoid robot, ALLEX, at the Robotics Innovation Center (RIH) at the Korea University of Science and Technology....[Details]
For today's new energy vehicles, they have different configurations from fuel vehicles, and some configurations have also become a selling point for manufacturers. Compared with traditional vehicle...[Details]
On August 21, according to a report by Korean media SEDaily yesterday, according to semiconductor industry sources, the HBM4 samples provided by Samsung to Nvidia last month have passed initial tes...[Details]
Nascent Micro is launching devices covering a wide range of power applications, including gallium nitride (GaN) drivers, dual-channel automotive drivers, and battery protection MOSFETs.
...[Details]
Definitions of VR
, AR, and MR:
What is Virtual Reality?
Virtual Reality (VR), also known as "spiritual realm" or "illusion," is a high-tech technology that has emerged in recent ye...[Details]
Qiangmao, your trusted semiconductor solutions partner, sincerely invites you to visit Electronics India 2025, South Asia's leading trade show for electronic components, systems, applications...[Details]
Lithium-ion batteries are a key component of electric vehicles. Their high energy density enables them to store a large amount of energy in a relatively compact and lightweight package, which is cr...[Details]
The transition to SDVs (software-defined vehicles) involves more than just replacing parts; rather, it involves the organic connection of various elements, from internal vehicle systems to ext...[Details]
It's not possible to generalize whether one vehicle is good or bad; the definition of "good" varies depending on the environment. Excluding policy support, whether electric vehicles or gasoline-pow...[Details]
System Principle
According to the average imbalance rate of the branch three-phase phase line load and the average value of the branch phase line current, the adjustment of the phase line load...[Details]
01 Introduction
The SINAMICS V20 inverter controls three-phase AC asynchronous motors. Depending on the size (frame sizes FSA to FSD), the power range of the three-phase AC 400V inverter cover...[Details]
In recent years, portable electronic devices such as mobile phones, digital cameras, music players, tablets, ultrabooks, and laptops have become almost a necessity, raising safety concerns. Besides...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
