CYStech Electronics Corp.
High –speed double diode
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date
Page No. : 1/4
BAV70N3
Description
The BAV70N3 consists of two high-speed switching diodes with common cathodes, fabricated in planar
technology, and encapsulated in the small SOT-23 plastic SMD package.
Equivalent Circuit
BAV70N3
2
1
SOT-23
Common cathode
1：Anode
2：Anode
3：Common cathode
3
Anode
Anode
Features
•
High switching speed: max. 4ns
•
Continuous reverse voltage: max. 75V
•
Repetitive peak reverse voltage: max. 85V
•
Repetitive peak forward current: max. 450mA.
•
Small plastic SMD package
Applications
•
High-speed switching in thick and thin-film circuits.
BAV70N3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
@T
A
=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
t=1ms
t=1s
Total power dissipation(
Note 1
)
Junction Temperature
Storage Temperature
Note 1: Device mounted on an FR-4 PCB.
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date
Page No. : 2/4
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
Ptot
T
j
T
stg
Min
-
-
-
-
-
-
-
-
-65
Max
85
75
215
125
450
4
1
0.5
250
150
+150
Unit
V
V
mA
mA
A
A
A
mW
°C
°C
Electrical Characteristics
@ Tj=25℃ unless otherwise specified
Parameters
Forward voltage
Symbol
V
F
Conditions
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=25V
V
R
=75V
V
R
=25V,Tj=150℃
V
R
=75V,Tj=150℃
V
R
=0V, f=1MHz
when switched from I
F
=10mA to
I
R
=10mA,R
L
=100Ω, measured
at I
R
=1mA
when switched from I
F
=10mA
tr=20ns
Min
-
Typ.
-
Max
715
855
1
1.25
30
2.5
60
100
1.5
4
1.75
Unit
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
I
R
Cd
trr
Vfr
-
-
-
-
-
-
-
-
Thermal Characteristics
Symbol
Rth,j-tp
Rth, j-a
Parameter
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Conditions
Note 1
Value
360
500
Unit
℃
/W
℃
/W
Note 1: Device mounted on an FR-4 PCB.
BAV70N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Forward Current vs Ambient Temperature
250
225
275
Forward Current---IF(mA)
250
225
200
175
150
125
100
75
50
25
0
0
50
100
150
200
0
0.2
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date
Page No. : 3/4
Forward Current vs Forward Voltage
Forward Current---IF(mA)
200
175
150
125
100
75
50
25
0
single diode loaded
double diode loaded
Ambient Temperature---Ta(℃)
Non-repetitive peak forward
current vs pulse duration
100
Non-repetitive peak forward
current---IFSM(A)
Diode Capacitance---CD(pF)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.4 0.6 0.8
1
Forward Voltage---VF(V)
1.2
1.4
Diode Capacitance vs Reverse Voltage
10
1
0.1
1
10
100
1000
10000
Pulse Duration---tp(μs)
0
2
4
6
8
10
12
14
16
Reverse Voltage---VR(V)
BAV70N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date
Page No. : 4/4
Marking:
A
L
3
B
1
2
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Anode 2.Anode
3.Common cathode
D
K
S
A4
TE
V
G
C
H
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAV70N3
CYStek Product Specification
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