TC51WHM616AXBN65 datasheet, PDF

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TC51WHM616AXBN65: DescriptionTENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS; Categorystorage storage; File Size190KB，11 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC51WHM616AXBN65 Overview

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC51WHM616AXBN65 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	48
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	65 ns
JESD-30 code	R-PBGA-B48
length	11 mm
memory density	67108864 bi
Memory IC Type	PSEUDO STATIC RAM
memory width	16
Number of functions	1
Number of terminals	48
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.6 V
Nominal supply voltage (Vsup)	2.75 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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TC51WHM616AXBN65,70

TENTATIVE

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION

The TC51WHM616AXBN is a 67,108,864-bit pseudo static random access memory(PSRAM) organized as

4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high

density, high speed and low power. The device operates single power supply. The device also features SRAM-like

W/R timing whereby the device is controlled by CE1 , OE , and WE on asynchronous. The device has the page

access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power

standby.

FEATURES

•

Organized as 4,194,304 words by 16 bits

Single power supply voltage of 2.6 to 3.3 V

Direct TTL compatibility for all inputs and outputs

Deep power-down mode: Memory cell data invalid

Page operation mode:

Page read operation by 8 words

Logic compatible with SRAM R/W ( WE ) pin

Standby current

Standby

100

µA

Deep power-down standby

µA

•

Access Times:

TC51WHM616AXBN

Access Time

CE1

Access Time

70 ns

25 ns

30 ns

65 ns

25 ns

30 ns

Access Time

Page Access Time

•

Package:

P-TFBGA48-0811-0.75BZ

(Weight:

g typ.)

PIN ASSIGNMENT

(TOP VIEW)

I/O11

I/O12

I/O13

A17

A21

A14

A12

A16

A15

A13

A10

CE1

I/O2

I/O4

I/O5

I/O6

CE2

I/O1

I/O3

VDD

VSS

I/O7

I/O8

A20

PIN NAMES

A0 to A21

A0 to A2

Address Inputs

Page Address Inputs

Chip Enable Input

Chip select Input

Write Enable Input

Output Enable Input

Data Byte Control Inputs

Power

Ground

I/O9

I/O10

VSS

VDD

I/O1 to I/O16 Data Inputs/Outputs

CE1

CE2

I/O15 I/O14

I/O16

A18

A19

A11

LB ,

GND

(FBGA48)

2002-08-22

1/11

TC51WHM616AXBN65 Related Products

	TC51WHM616AXBN65	TC51WHM616AXBN70
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	BGA	BGA
package instruction	TFBGA,	TFBGA, BGA48,6X8,30
Contacts	48	48
Reach Compliance Code	unknow	unknow
ECCN code	3A991.B.2.A	3A991.B.2.A
Maximum access time	65 ns	70 ns
JESD-30 code	R-PBGA-B48	R-PBGA-B48
length	11 mm	11 mm
memory density	67108864 bi	67108864 bi
Memory IC Type	PSEUDO STATIC RAM	PSEUDO STATIC RAM
memory width	16	16
Number of functions	1	1
Number of terminals	48	48
word count	4194304 words	4194304 words
character code	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-25 °C	-25 °C
organize	4MX16	4MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA
Package shape	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	3.3 V	3.3 V
Minimum supply voltage (Vsup)	2.6 V	2.6 V
Nominal supply voltage (Vsup)	2.75 V	2.75 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	OTHER	OTHER
Terminal form	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	8 mm	8 mm

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