CHA5293a
17-24GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5293a is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vd1 Vd2
Vg3 Vd3
Vg1,2 Vd2
25
20
15
10
5
0
-5
-10
-15
-20
12
14
16
18
20
Vg3 Vd3
Main Features
■
Performances : 17-24GHz
■
30dBm output power @ 1dB comp. gain
■
17 dB
±
1dB gain
■
DC power consumption, 800mA @ 6V
■
Chip size : 4.01 x 2.52 x 0.05 mm
Gain & RLoss (dB)
S22
S11
22
24
26
28
Frequency (GHz)
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
Min
17
16
29
Typ
17
30
800
Max
24
Unit
GHz
dB
dBm
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52932123 -03-May-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5293a
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #800mA
Symbol
Fop
G
∆G
Is
P1dB
P03
IP3
PAE
VSWRin
17-24GHz High Power Amplifier
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression (1)
3 order intercept point (2)
Power added efficiency at 1dB comp.
Input VSWR (2)
rd
Min
17
16
Typ
Max
24
Unit
GHz
dB
dB
dB
dBm
dBm
dBm
%
17
±1
50
29
30
32
42
20
3:1
3:1
155
800
1000
VSWRout Output VSWR (2)
Tj
Id
Junction temperature for 80°C backside
Bias current @ small signal
°C
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Ig
Vgd
Pin
Tch
Ta
Tstg
Parameter
Maximum drain bias voltage with Pin max=12dBm
Maximum drain bias current
Gate bias voltage
Gate bias current
Minimum negative gate drain voltage ( Vg - Vd)
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
6.25
1450
-2.5 to +0.4
-5 to +5
-8
15
175
-40 to +80
-55 to +125
Unit
V
mA
V
mA
V
dBm
°C
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52932123 -03-May-02
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
17-24GHz High Power Amplifier
Typical on Jig Measurements
( including 1dB loss for the gain & 0.5dBm for the power)
Bias conditions: Vd=6V, Vg tuned for Id = 800mA
25
20
15
CHA5293a
Gain & RLoss (dB)
10
5
0
-5
-10
-15
-20
12
14
16
18
20
22
24
26
28
S22
S11
Frequency (GHz)
Linear Gain & Return Losses versus frequency
20
19
18
17
Gain (dB)
16
15
14
13
12
11
10
14
16
18
20
22
24
26
28
30
32
Output Power (dBm)
16 GHz
22 GHz
18 GHz
24GHz
20 GHz
Série2
1100
1000
1800
1700
1600
1500
1400
1300
1200
Drain current (mA) @ 20GHz
900
800
Output power versus frequency & Drain current @ 20GHz
Ref. : DSCHA52932123 -03-May-02
3/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5293a
74
70
66
62
58
54
50
46
42
38
34
30
5
6
7
8
17-24GHz High Power Amplifier
F=18GHz
F=10MHz
C/ I3 (dBc)
IP3 (dBm)
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/I3 & IP3 versus total output power @ 18GHz
78
74
70
66
62
58
54
50
46
42
38
34
30
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
F=20GHz
F=10MHz
C/ I3 (dBc)
IP3 (dBm)
C/I3 & IP3 versus total output power @ 20GHz
Ref. : DSCHA52932123 -03-May-02
4/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
17-24GHz High Power Amplifier
78
74
70
66
62
58
54
50
46
42
38
34
30
5
6
7
8
CHA5293a
F=21.5GHz
F=10MHz
C/ I3 (dBc)
IP3 (dBm)
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/I3 & IP3 versus total output power @ 21.5GHz
74
70
66
62
58
54
50
46
42
38
34
30
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
F=23.5GHz
F=10MHz
C/ I3 (dBc)
IP3 (dBm)
C/I3 & IP3 versus total output power @ 23.5GHz
Ref. : DSCHA52932123 -03-May-02
5/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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