TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
128-MBIT (16M
DESCRIPTION
8 BITS/8M x 16BITS) CMOS NAND E
2
PROM
The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E
2
PROM) organized as 528 bytes/264 words 32 pages 1024 blocks. The device uses
dual power supplies (2.7 V to 3.6 V for V
CC
and 1.65 V to 1.95 V for V
CCQ
). The device has a 528-byte/264-words
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes:
528 bytes 32 pages/8k words + 256 words:264 words x 32 pages).
The TC58DxM72x1xxxx is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
TC58DxM72A1xxxx
Memory cell allay 528 32K 8
Register
528 8
Page size
528 bytes
Block size
(16K 512) bytes
Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
Mode control
Serial input/output
Command control
Power supply
TC58DVM72x1xxxx
Vcc:
2.7V to 3.6V
Vccq:
2.7V to 3.6V
Program/Erase Cycles 1E5 cycle (with ECC)
Access time
Cell array to register 25 s max
Serial Read Cycle
50 ns min
Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.)
10 mA typ.
Erase (avg.)
10 mA typ.
Standby
50 A max.
Package
TSOP I 48-P-1220-0.50 (Weight:0.53g typ)
TC58DxM72F1xxxx
264 x 32k x 16
264 x 16
264 words
(8k + 256) words
TC58DAM72x1xxxx
2.7V to 3.6V
1.65V to 1.95V
000707EBA1
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
2003-01-24
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TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
VALID BLOCKS (1)
SYMBOL
N
VB
PARAMETER
Number of Valid Blocks
MIN
1004
TYP.
MAX
1024
UNIT
Blocks
(1) The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.
RECOMMENDED DC OPERATING CONDITIONS
TC58DVM72A1xxxx,TC58DVM72F1xxxx
SYMBOL
V
CC
V
CCQ
V
IH
V
IL
*
PARAMETER
Power Supply Voltage
I/O Port Power Supply Voltage
High Level input Voltage
Low Level Input Voltage
MIN
2.7
2.7
2.0
0.3
*
TYP.
3.3
MAX
3.6
3.6
V
CCQ
0.8
0.3
UNIT
V
V
V
V
2 V (pulse width lower than 20 ns)
TC58DAM72A1xxxx,TC58DAM72F1xxxx
SYMBOL
V
CC
V
CCQ
V
IH
V
IL
*
PARAMETER
Power Supply Voltage
I/O Port Power Supply Voltage
High Level input Voltage
Low Level Input Voltage
MIN
2.7
1.65
V
CCQ
X 0.78
0.3
*
TYP.
3.3
1.8
MAX
3.6
1.95
V
CCQ
0.3
UNIT
V
V
V
V
V
CCQ
X 0.22
2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS
(Ta = 0° to 70°C, V
CC
SYMBOL
I
IL
I
LO
I
CCO1
I
CCO3
I
CCO4
I
CCO5
I
CCO7
I
CCO8
I
CCS1
I
CCS2
V
OH
V
OL
I
OL
( RY/BY )
PARAMETER
Input Leakage Current
Output Leakage Current
Operating Current (Serial Read)
Operating Current
(Command Input)
Operating Current (Data Input)
Operating Current
(Address Input)
Programming Current
Erasing Current
Standby Current
Standby Current
High Level Output Voltage
Low Level Output Voltage
Output Current of RY/BY pin
CE
CE
I
OH
I
OL
V
OL
V
IH,
WP
V
CCQ
mA
2.1 mA
0.4 V
V
IN
V
OUT
CE
t
cycle
t
cycle
t
cycle
2.7 V to 3.6 V)
MIN
TYP.
MAX
10
10
50 ns
10
10
10
10
10
10
0 V/V
CCQ
0 V/V
CCQ
V
CCQ
-0.5
0.4
8
10
30
30
30
30
30
30
1
50
UNIT
A
A
mA
mA
mA
mA
mA
mA
mA
A
V
V
mA
CONDITION
0 V to V
CCQ
0 V to V
CCQ
V
IL
, I
OUT
50 ns
50 ns
50 ns
0 mA, t
cycle
0.2 V, WP
2003-01-24
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TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta
0° to 70°C, V
CC
2.7 V to 3.6 V)
PARAMETER
CLE Setup Time
CLE Hold Time
CE
Setup Time
CE
Hold Time
SYMBOL
t
CLS
t
CLH
t
CS
t
CH
t
WP
t
ALS
t
ALH
t
DS
t
DH
t
WC
t
WH
t
WW
t
RR
t
RP
t
RC
t
REA
t
CEA
t
ALEA
t
CEH
t
REAID
t
OH
t
RHZ
t
CHZ
t
REH
t
IR
t
RSTO
t
CSTO
t
RHW
t
WHC
t
WHR
t
R
t
WB
t
AR2
t
RB
t
CRY
t
RST
MIN
0
10
0
10
25
0
10
20
10
50
15
100
20
35
50
MAX
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE
High Hold Time
WP
High to
WE
Low
Ready to
RE
Falling Edge
Read Pulse Width
Read Cycle Time
RE
Access Time (Serial Data Access)
CE
Access Time (Serial Data Access,ID Read)
35
45
ns
ns
ns
Ns
(2)
ALE Access Time (ID Read)
CE
High Time for Last Address in Serial Read Cycle
RE
Access Time (ID Read)
35
10
30
20
15
0
35
45
0
30
30
25
200
50
200
1+
tr(
RY/BY )
6/10/500
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
ns
ns
ns
s
s
(1)(2)
Data Output Hold Time
RE
High to Output High Impedance
CE
High to Output High Impedance
RE
High Hold Time
Output-High-impedance-to-
RE
Falling Edge
RE
Access Time (Status Read)
CE
Access Time (Status Read)
RE
High to
WE
Low
WE
High to
CE
Low
WE
High to
RE
Low
Memory Cell Array to Starting Address
WE
High to Busy
ALE Low to
RE
Low (Read Cycle)
RE
Last Clock Rising Edge to Busy(in Sequential Read)
CE
High to Ready(When interrupted by
CE
in Read Mode)
Device Reset Time (Read/Program/Erase)
AC TEST CONDITIONS
CONDITION
PARAMETER
TC58DVxxxxx
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
2.4 V, 0.4 V
3 ns
1.5 V, 1.5 V
1.5 V, 1.5 V
C
L
(100 pF)
1 TTL
TC58DAxxxx
V
CCQ
-0.2 V, 0.2 V
3 ns
0.9 V, 0.9 V
0.9 V, 0.9 V
C
L
(30 pF)
2003-01-24
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