DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPSH10
NPN 1 GHz general purpose
switching transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1998 Aug 27
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
FEATURES
•
Low cost
•
High power gain.
DESCRIPTION
Silicon NPN general purpose
transistor in a SOT54 (TO-92)
package. PNP complement is the
MPSH81.
PINNING
PIN
1
2
3
DESCRIPTION
collector
emitter
base
page
MPSH10
1
2
3
MSB033
Marking code:
PSH10.
Fig.1 SOT54.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
V
EBO
P
tot
T
j
h
FE
C
re
C
rb
f
T
r
b
C
c
Note
1. T
s
is the temperature at the soldering point of the collector lead, 4 mm from the body.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector lead, 4 mm from the body.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
= 25
°C;
note 1
open base
open collector
CONDITIONS
open emitter
MIN.
−
−
−
−
−
−65
−
MAX.
30
25
3
40
1
+150
150
UNIT
V
V
V
mA
W
°C
°C
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
total power dissipation
junction temperature
DC current gain
collector-base feedback capacitance
transition frequency
collector-base time constant
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 10 V; I
E
= 0; f = 1 MHz
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°C
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°C
collector-emitter feedback capacitance V
CB
= 10 V; I
E
= 0; f = 1 MHz
open base
open collector
T
s
= 25
°C;
note 1
CONDITIONS
open emitter
MIN.
−
−
−
−
−
60
−
0.35
650
−
MAX.
30
25
3
1
150
−
0.7
0.65
−
9
pF
pF
MHz
ps
V
V
V
W
°C
UNIT
1998 Aug 27
2
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
Note
1.
T
s
is the temperature at the soldering point of the collector lead, 4 mm from the body.
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
note 1
MPSH10
VALUE
125
250
UNIT
K/W
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEon
I
CBO
I
EBO
h
FE
C
re
C
rb
f
T
r
b
C
c
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter feedback capacitance
collector-base feedback capacitance
transition frequency
collector-base time constant
CONDITIONS
open emitter; I
C
= 100
µA;
I
E
= 0
open base; I
C
= 1 mA; I
B
= 0
open collector; I
E
= 10
µA;
I
C
= 0
I
C
= 4 mA; I
B
= 0.4 mA
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 25 V; I
E
= 0
V
CB
= 25 V; I
C
= 0
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
V
CB
= 10 V; I
C
= i
c
= 0; f = 1 MHz
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°C
V
CB
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°C
MIN.
30
25
3
−
−
−
−
60
−
0.35
650
−
MAX.
−
−
−
0.5
0.95
100
100
−
0.7
0.65
−
9
pF
pF
MHz
ps
UNIT
V
V
V
V
V
nA
nA
1998 Aug 27
3
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
MPSH10
100
handbook, halfpage
Y11
(mS)
80
g11
60
−b
11
40
MRA154
−10
handbook, halfpage
b11
(mS)
−20
MRA156
−30
1000 MHz
−40
700
400
20
−50
200 100
0
10
2
f (MHz)
10
3
−60
0
20
40
60
80
100
g11 (mS)
V
CB
= 10 V; I
C
= 4 mA.
Fig.2
Common base input admittance (Y
11
) as a
function of frequency.
V
CB
= 10 V; I
C
= 4 mA.
Fig.3 Common base input admittance (Y
11
).
handbook, halfpage
70
MRA155
Y21
handbook, halfpage
60
MRA157
b21
200
400
600
700
(mS)
50
b21
(mS)
50
100
30
−g
21
40
10
30
1000 MHz
−10
20
−30
10
2
f (MHz)
10
3
10
−70
−50
−30
−10
10
30
g21 (mS)
V
CB
= 10 V; I
C
= 4 mA.
V
CB
= 10 V; I
C
= 4 mA.
Fig.4
Common base forward transfer admittance
(Y
21
) as a function of frequency.
Fig.5
Common base forward transfer admittance
(Y
21
).
1998 Aug 27
4
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
MPSH10
handbook, halfpage
5
MRA150
Y12
(mS)
handbook, halfpage
0
MRA152
b12
(mS)
100
200
400
4
−1
3
−2
700
2
−b
12
−3
1000 MHz
1
g12
f (MHz)
10
3
−4
0
10
2
−5
−2
−1.2
−0.4
0.4
1.2
2
g12 (mS)
V
CB
= 10 V; I
C
= 4 mA.
V
CB
= 10 V; I
C
= 4 mA.
Fig.6
Common base reverse transfer admittance
(Y
12
) as a function of frequency.
Fig.7
Common base reverse transfer admittance
(Y
12
).
handbook, halfpage
10
MRA151
Y22
(mS)
handbook, halfpage
10
MRA153
b22
1000 MHz
(mS)
8
700 MHz
8
6
b22
4
6
4
400 MHz
200 MHz
2
g22
0
10
2
0
0
2
4
6
8
10
g22 (mS)
2
100 MHz
f (MHz)
10
3
V
CB
= 10 V; I
C
= 4 mA.
V
CB
= 10 V; I
C
= 4 mA.
Fig.8
Common base reverse admittance (Y
22
) as
a function of frequency.
Fig.9 Common base reverse admittance (Y
22
).
1998 Aug 27
5
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