AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N04Q1618C2B
Advance Information
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0
o
C
to +70
o
C for the lowest power and is also available
in the industrial range of -40
o
C to +85
o
C. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
Features
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
Product Options
Part Number
N04Q1612C2Bx-15C
1
N04Q1618C2Bx-15C
1
N04Q1618C2Bx-70C
N04Q1618C2Bx-85C
Typical
Standby
Current
50nA
50nA
200nA
200nA
1.8
1.8, 3.0
Vcc
(V)
1.2
VccQ
(V)
1.2, 1.8, 3.0
Speed
(nS)
150ns
150ns
70ns
85ns
Typical
Operating
Operating Current Temperature
0.4 mA @ 1MHz
0.4 mA @ 1MHz
0.6 mA @ 1MHz
0.6 mA @ 1MHz
0
o
C to +70
o
C
1. Part numbers are under development. Please contact your local sales representative for details.
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
1
N04Q1618C2B
AMI Semiconductor, Inc.
Functional Block Diagram
Address
Inputs
(A1 - A4)
Advance Information
Word
Address
Decode
Logic
Address
Inputs
(A0, A5 - A17)
Page
Address
Decode
Logic
4Mb
RAM Array
Input/
Output
I/O0 - I/O7
Mux
and
Buffers
I/O8 - I/O15
Word Mux
CE1
CE2
WE
OE
UB
LB
Control
Logic
Functional Description
CE1
H
X
L
L
L
L
CE2
X
L
H
H
H
H
WE
X
X
X
L
H
H
OE
X
X
X
X
3
L
H
UB
1
X
X
H
L
1
L
1
L
1
LB
1
X
X
H
L
1
L
1
L
1
I/O
0
- I/O
151
High Z
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
2
Standby
2
Standby
Write
3
Read
Active
POWER
Standby
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O
0
- I/O
15
are affected as shown. When LB only is in the select mode only I/O
0
- I/O
7
are affected as shown. When UB is in the select mode only I/O
8
- I/O
15
are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
3
N04Q1618C2B
AMI Semiconductor, Inc.
Absolute Maximum Ratings
1
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
Rating
–0.3 to V
CC
+0.3
–0.3 to 4
500
–40 to 125
-40 to +85
260
o
C, 10sec
Unit
V
V
mW
o
o
o
Advance Information
C
C
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range, 0
o
- 70
o
C)
Item
Core Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Symbol
V
CC
V
CCQ
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
I
OH
= -100uA
I
OL
= 100uA
V
IN
= 0 to V
CC
OE = V
IH
or Chip
Disabled
Device
N04Q1612...
N04Q1618...
N04Q1612...
N04Q1618...
Conditions
1.2V Core Device
1.8V Core Device
1.2V Core Device
1.8V Core Device
Min.
1.1
1.65
1.1
1.65
0.8 x
VCCQ
–0.3
V
CC
–0.2
0.2
0.5
0.5
Typ
1.2
1.8
Max
1.3
1.95
3.3
3.3
V
CC
+0.3
0.2 x
VCCQ
V
V
µA
µA
Unit
V
V
V
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
4
N04Q1618C2B
AMI Semiconductor, Inc.
Power Consumption
(T
A
= 0
o
C - 70
o
C)
Device PN
Standby Current
2
N04Q1612C2Bx-
15C
Read/Write Current
3
Page Mode Current
Isb
Icc
Iccp
Chip Disabled
V
CC
= 1.3V, V
IN
= V
CC
or 0
Chip Enabled, I
OUT
= 0
V
CC
=1.3V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=1.3V, V
IN
=V
IH
or V
IL
Chip Disabled
V
CC
= 1.9V, V
IN
= V
CC
or 0V
Chip Enabled, I
OUT
= 0
V
CC
=1.9V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=1.9V, V
IN
=V
IH
or V
IL
Chip Disabled
V
CC
= 1.9V, V
IN
= V
CC
or 0
Chip Enabled, I
OUT
= 0
V
CC
=1.9V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=1.9V, V
IN
=V
IH
or V
IL
Advance Information
Speed
Typ
1
50
Max
500
0.5
3
100
450
nA
mA
µA
1us
150ns
1us
150ns
0.4
2
80
300
Standby Current
N04Q1618C2Bx-
15C
Read/Write Current
Page Mode Current
Isb
Icc
Iccp
50
1us
150ns
1us
150ns
0.4
2
80
400
500
0.5
3
100
500
nA
mA
µA
Standby Current
Read/Write Current
Isb
Icc
0.2
1us
70ns
85ns
1us
70ns
85ns
0.6
6
0.1
0.8
1.5
0.9
7
0.2
1
µA
mA
N04Q1618C2Bx-
70C/85C
Page Mode Current
Iccp
mA
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25°C and not 100% tested.
2. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS. This applies to all ISB values.
3. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system. This applies to all Icc and Iccp values.
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
5
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