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MRF644

Description
npn silicon RF power transistor
File Size100KB,4 Pages
ManufacturerASI [ASI Semiconductor, Inc]
Download Datasheet View All

MRF644 Overview

npn silicon RF power transistor

MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF644/D
NPN Silicon
RF Power Transistor
. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
Specified 12.5 Volt, 470 MHz Characteristics —
Output Power = 25 Watts
Minimum Gain = 6.2 dB
Efficiency = 60%
Characterized with Series Equivalent Large–Signal Impedance Parameters
Built–In Matching Network for Broadband Operation
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @
16–Volt High Line and 50% Overdrive
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRF644
25 W, 470 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
16
36
4.0
4.0
103
0.59
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
16
36
4.0
5.0
Vdc
Vdc
Vdc
mAdc
(continued)
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF644
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