Excelics
DATA SHEET
•
•
•
•
•
•
+33dBm TYPICAL OUTPUT POWER
20.0 dB TYPICAL POWER GAIN AT 2GHz
0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 60mA PER BIN RANGE
75
S
100
EPA240D
High Efficiency Heterojunction Power FET
410
104
D
72
620
155
G
S
94
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=6mA
O
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
MIN
31.0
18.5
TYP
33.0
33.0
20.0
15.0
55
MAX
UNIT
dBm
dB
%
440
480
720
760
-1.0
940
mA
mS
-2.5
V
V
V
o
Drain Breakdown Voltage Igd=2.4mA
Source Breakdown Voltage Igs=2.4mA
Thermal Resistance (Au-Sn Eutectic Attach)
-11
-7
-15
-14
23
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
620mA
Ids
Forward Gate Current
120mA
20mA
Igsf
Input Power
30dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
6.0 W
5.0W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA240D
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
FREQ
(GHz)
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
Note:
--- S11 ---
MAG
ANG
0.932
-84.1
0.885 -124.4
0.868 -144.6
0.861 -156.7
0.859 -165.1
0.858 -171.6
0.859 -176.9
0.860
178.6
0.862
174.6
0.864
171.0
0.867
167.6
0.870
164.4
0.873
161.4
0.877
158.5
0.880
155.8
0.884
153.1
0.888
150.5
0.892
147.9
0.896
145.4
0.900
143.0
8V, 1/2 Idss
--- S21 ---
MAG ANG
15.622 132.6
10.061 109.7
7.154 97.1
5.496 88.3
4.443 81.3
3.720 75.2
3.194 69.7
2.794 64.5
2.478 59.5
2.223 54.7
2.012 50.0
1.833 45.4
1.680 40.9
1.546 36.5
1.428 32.2
1.323 27.9
1.229 23.8
1.143 19.7
1.064 15.7
0.993 11.8
--- S12 ---
MAG ANG
0.023
49.4
0.029
33.4
0.031
27.8
0.032
26.3
0.033
26.8
0.034
28.5
0.034
30.9
0.035
33.8
0.037
36.8
0.039
39.7
0.041
42.4
0.044
44.7
0.048
46.5
0.051
47.8
0.055
48.5
0.060
48.7
0.065
48.5
0.069
47.8
0.074
46.8
0.079
45.5
--- S22 ---
MAG
ANG
0.267
-50.6
0.194
-76.5
0.165
-92.0
0.156 -103.5
0.158 -113.0
0.166 -121.5
0.179 -129.2
0.194 -136.4
0.212 -143.3
0.232 -149.8
0.255 -156.0
0.279 -162.0
0.304 -167.8
0.331 -173.5
0.359 -178.9
0.388
175.8
0.417
170.6
0.447
165.6
0.477
160.7
0.506
155.9
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.
ARM Technology
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