EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
13.75– 14.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
24% Power Added Efficiency
Hermetic Metal Flange Package
EIC1314-8
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
IMD3
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 13.75-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2400mA
Gain at 1dB Compression
f = 13.75-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2400mA
Gain Flatness
f = 13.75-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2400mA
Power Added Efficiency at 1dB Compression
f = 13.75-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2400mA
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 14.50 GHz
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
38.5
5.0
TYP
39.0
6.0
MAX
UNITS
dBm
dB
±0.6
24
-44
-47
2500
4000
-2.5
3.5
2800
6000
-4.0
4.0
o
dB
%
dBc
mA
mA
V
C/W
f = 13.75-14.5GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 40 mA
Note: 1) Tested with 15 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
86.4mA
-14.4mA
37 dBm
175 C
o
-65 to +175 C
o
CONTINUOUS
2
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175 C
-65 to +175
o
C
37.5W
o
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
37.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised February 2009
EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
Output Power V.S Frequency
Gain @ 1dB Compression V.S Frequency
10
9
42
39
P1dB / dBm
8
7
36
Gain / dB
6
5
4
3
2
1
33
30
13.6
13.8
14
14.2
14.4
14.6
0
13.6
13.8
14
14.2
14.4
14.6
Frequency / GHz
Frequency / GHz
P1dB v.s Frequency
G1dB v.s Frequency
10
5
0
dB(S(1,2))
dB(S(2,1))
S(2,2)
S(1,1)
-5
-10
-15
-20
-25
13.5
13.6
13.7
13.8
13.9
14.0
14.1
14.2
14.3
14.4
14.5
14.6
14.7
freq (13.55GHz to 14.70GHz)
freq, GHz
freq
13.55GHz
13.64GHz
13.73GHz
13.82GHz
13.90GHz
13.99GHz
14.08GHz
14.17GHz
14.26GHz
14.35GHz
14.43GHz
14.52GHz
14.61GHz
14.70GHz
S
S(1,1)
0.318 / -99.635
0.280 / -110.611
0.243 / -122.815
0.209 / -135.832
0.175 / -149.745
0.146 / -167.110
0.120 / 172.763
0.102 / 149.063
0.093 / 122.419
0.093 / 94.109
0.099 / 67.353
0.112 / 44.513
0.130 / 24.077
0.149 / 7.110
S(1,2)
0.091 / 83.555
0.093 / 74.732
0.095 / 66.548
0.097 / 58.383
0.099 / 49.523
0.100 / 40.173
0.102 / 32.163
0.103 / 23.382
0.104 / 14.730
0.105 / 6.052
0.105 / -2.801
0.105 / -11.762
0.105 / -21.138
0.105 / -30.090
S(2,1)
2.127 / 105.940
2.158 / 97.551
2.187 / 89.114
2.221 / 80.625
2.245 / 71.874
2.257 / 63.452
2.272 / 54.877
2.285 / 46.163
2.289 / 37.466
2.294 / 28.755
2.295 / 20.041
2.286 / 11.332
2.282 / 2.498
2.270 / -6.260
S(2,2)
0.542 / 67.220
0.522 / 60.828
0.502 / 54.065
0.479 / 47.347
0.454 / 40.295
0.430 / 32.829
0.404 / 25.080
0.377 / 16.820
0.352 / 7.883
0.328 / -1.916
0.305 / -12.402
0.287 / -23.532
0.273 / -35.903
0.260 / -49.190
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
= 2400mA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 2 of 4
Revised February 2009
EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
Power Dissipation V.S Temperature
40
35
Total Power Dissipation / W
Pout [S.C.L.] (dBm)
THIRD-ORDER
INTERCEPT POINT IP3
IP
3
= Pout + IM3/2
f1 or f2
30
25
20
15
10
5
0
0
50
100
Temperature / °C
150
200
Pout
Pin
IM3
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
IM3 v.s Output Power
f1=14.5 GHz, f2=14.49 GHz
-20
-30
-40
IM3 / dBc
-50
-60
-70
-80
13
16
19
22
Pout (S.C.L) / dBm
25
28
31
Typical IMD3 Data (T= 25°C)
V
DS
= 10 V, I
DSQ
≈
2400 mA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 3 of 4
Revised February 2009
EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS
SEMICONDUCTOR, INC.
AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 4 of 4
Revised February 2009
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