RF2172
0
Typical Applications
•
Bluetooth
TM
PA
• 2.4GHz to 2.5GHz ISM Band Systems
• 902MHz to 928MHz ISM Band Systems
Product Description
The RF2172 is a medium-power high efficiency amplifier
IC targeting 3.6V handheld systems. The device is manu-
factured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 2.45GHz
Bluetooth applications and frequency hopping/direct
sequence spread-spectrum cordless telephones or other
applications in the 902MHz to 928MHz ISM band. The
device is packaged in a compact 4mmx4mm QFN. The
device features analog gain control to optimize transmit
power while maximizing battery life in portable equipment
requiring up to 100mW transmit power at the antenna
port.
BLUETOOTH
is a trademark owned by the Bluetooth SIG, Inc., and licensed
to RF Micro Devices, Inc.
0.10 C B
-B-
ISM BAND 3.6V, 250mW AMP WITH
ANALOG GAIN CONTROL
• 3.6V Spread-Spectrum Cordless Phones
• Portable Battery-Powered Equipment
• Spread-Spectrum Systems
4.00
0.10 C B
2 PLCS
3.75
2 PLCS
2.00
0.80
TYP
2
A
1.60
2 PLCS
3.75
0.75
0.50
INDEX AREA
Dimensions in mm.
1.50
SQ.
4.00
0.10 C A
2 PLCS
0.45
0.28
3.20
2 PLCS
2.00
0.10 C A
2 PLCS
Shaded pin is lead 1.
12°
MAX
0.05
0.00
0.10 M C A B
1.00
0.90
0.75
0.65
C
0.05
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: QFN, 16-Pin, 4x4
Features
• 23.5dBm Typical Output Power
• 0dB to 28dB Variable Gain
• 45% Efficiency at Max Output
• On-Board Power Down Mode
• 2.4GHz to 2.5GHz Operation
• 902MHz to 928MHz Operation
GND
GND
GND
14
1
GND 2
RF IN 3
GND 4
5
GND
16
15
13
12 RF OUT
11 RF OUT
Bias
6
VPD
7
APC
8
GND
GND
10 GND
9
GND
VCC
Ordering Information
RF2172
ISM Band 3.6V, 250mW Amp with Analog Gain Con-
trol
RF2172PCBA411 Fully Assembled Evaluation Board 2.4 to 2.5GHz
RF2172PCBA410 Fully Assembled Evaluation Board 908 to 928MHz
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A11 030729
2-1
RF2172
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
APC Current (Maximum)
Control Voltage (V
PD
)
Input RF Power
Operating Case Temperature
Storage Temperature
Rating
-0.5 to +6.0
+10
-0.5 to +6.0
+10
-40 to +85
-55 to +155
Unit
V
DC
mA
V
DC
dBm
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Usable Frequency Range
Input Impedance
Input VSWR
Output Load VSWR
Specification
Min.
Typ.
Max.
500 to 2500
50
1.8:1
<10:1
<6:1
2.4 to 2.5
+23.5
45
-25
-45
-40
-50
20-j4.5
0 to V
CC
Unit
MHz
Ω
Condition
T=25°C, V
CC
=3.6V, V
PD
=3.6V, V
APC
=2.5V
2.45GHz Operation
Operating Frequency
Maximum Output Power
Total Efficiency
Reverse Isolation
Second Harmonic
Third Harmonic
All Other Spurious
Output Load Impedance
Gain Control Voltage
High Gain
Low Gain
22
24.5
GHz
dBm
%
dB
dBc
dBc
dBc
Without Input Match
0<V
APC
<3.0V
0<V
APC
<3.6V
Freq=2.4GHz to 2.5GHz, P
IN
=0dBm
Present to part
V
dB
dB
MHz
dBm
%
dB
dBc
dBc
dBc
Ω
V
dB/V
dB
V
mA
65
10
mA
μA
mA
mA
V
APC
=3.6V, V
CC
=3.6V, P
IN
=0dBm
V
APC
=0V, V
CC
=3.6V, P
IN
=0dBm
Freq=902MHz to 928MHz, P
IN
=-3.0dBm
+22
-10
902 to 928
+24
58
-35
-40
-40
-50
20-j1.6
0 to V
CC
20
0 to 28
3.6
145
35
2.8
4.5
2.25
902MHz Operation
Operating Frequency
Maximum Output Power
Total Efficiency
Reverse Isolation
Second Harmonic
Third Harmonic
All Other Spurious
Output Load Impedence
Gain Control Voltage
Gain Control Slope
Gain
Present to part
Power Supply
Power Supply Voltage
Power Supply Current
Idle Current
V
CC
=3.6V, V
APC
=3.6V, P
IN
=-3dBm,
V
PD
=3.6V
V
PD
=3.6V, V
APC
=3.6V, RF P
IN
<-30dBm
V
CC
=3.6V, V
APC
=0V, V
PD
=0V total I
CC
V
CC
=3.6V, V
PD
=3.6V into PD pin
V
CC
=3.0V, V
PD
=3.0V into PD pin
Power Down Current
I(PD)
I(PD)
2-2
Rev A11 030729
RF2172
Pin
1
2
3
4
5
6
Function
GND
GND
RF IN
GND
GND
VPD
Description
Ground connection. For best performance, keep traces physically short
and connect immediately to the ground plane.
Ground connection for the driver stage. For best performance, keep
traces physically short and connect immediately to the ground plane.
RF input. This is a 50Ω input. No external matching is needed. An
external DC blocking capacitor is required if this port is connected to a
DC path to ground or a DC voltage.
See pin 1.
See pin 1.
Power down pin. When this pin is 0V, the device will be in power down
mode, dissipating minimum DC power. This pin also serves as the V
CC
supply pin for the bias circuitry. V
PD
should be at the supply voltage
when the part is not in power down mode.
Analog power control. Output power varies as a function of the voltage
on this pin. See graph. This pin must be driven through a series resistor
with a voltage between 0V and V
CC
. Series resistor determines
dynamic range of power control. See plot “P
OUT
versus Gain Control
versus Gain Control Resistor”.
Interface Schematic
See pin 15.
7
APC
APC
Bias
Network
RF IN
1st
Stage
8
9
10
11
12
GND
GND
GND
RF OUT
RF OUT
See pin 1.
See pin 1.
See pin 1.
RF output. An external matching network is required to provide the opti- See pin 15.
mum load impedance at this pin.
RF output and power supply for the output stage. Bias voltage for the
See pin 15.
output stage is provided through this pin. A shunt cap resonating with
the bond wire inductance at 2xf
0
can also be used at this pin to provide
a second harmonic trap.
See pin 1.
See pin 1.
Power supply for driver stage and interstage matching. This pin forms
the shunt inductance needed for proper tuning of the interstage. Refer
to the application schematic for the proper configuration. Note: Position
and value of the components are important.
V
CC
13
14
15
GND
GND
VCC
Inductor
Pin 15
Bond
Wire
RF IN
1st Stage
External Cap
GND
RF OUT
RF OUT
2nd Stage
16
Pkg
Base
GND
GND
See pin 1.
Ground connection for the output stage. This pad should be connected
to the groundplane by vias directly under the device. A short path is
required to obtain optimum performance, as well as provide a good
thermal path to the PCB for maximum heat dissipation.
Rev A11 030729
2-3
RF2172
Application Schematic - 915MHz
V
CC
22 nF
3.9 nH
1
2
22 nF
RF IN
3
4
5
16
15
14
13
12
4 pF
22 nF
V
CC
3.9 nH
11
Bias
6
7
8
10
9
2.7 nH
4 pF
22 nF
RF OUT
R
APC
3 kΩ
22 nF
22 nF
V
PD
VAPC
Application Schematic - 2.45GHz
V
CC
22 nF
4 pF
10
Ω
1
2
22 nF
RF IN
0.5 pF
3
4
5
16
15
14
13
12
1.5 nH
11
22 nF
V
CC
22 nF
RF OUT
1.5 pF
Bias
6
7
8
10
9
5 pF
5 pF
V
CC
10
Ω
200
Ω
VAPC
22 nF
22 nF
2-4
Rev A11 030729
RF2172
Evaluation Board Schematic - 915MHz
VCC2
P1-1
22 nF
L1
3.9 nH
R1*
OPEN
P1
1
2
P1-3
3
CON3
VCC2
GND
VCC3
P2-3
P2-1
P2
1
2
3
CON3
VAPC
GND
VCC1
1
C2
22 nF
2
3
4
5
16
15
14
13
12
11
C7
4 pF
L3
3.9 nH
L2
2.7 nH
C8
22 nF
VCC3
C6
22 nF
C5
4 pF
50
Ω μstrip
J1
RF IN
50
Ω μstrip
Bias
6
7
8
10
9
J2
RF OUT
R2
3 kΩ
VCC1
C3
22 nF
C4
22 nF
VAPC
Rev A11 030729
2-5
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