RF2145
2
Typical Applications
• 4.8V DCS1800/1900 Handsets
• 3V DECT Handsets and Base Stations
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
DCS1800/1900 POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2145 is a high power, high efficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
a 4-cell DCS1800 or DCS1900 handset. The device is
packaged in a 16-lead plastic package with wide ground
leads, and is self-contained with the exception of the out-
put matching network and power supply feed line. Only a
single positive voltage is required to operate with full
power and efficiency, and on-board power control and
power-down functions are provided.
.158
.150
1
.009
.004
.069
.064
.020
.014
.392
.386
.050
.244
.230
8°MAX
0°MIN
.059
.054
.035
.016
.010
.008
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
Package Style: SOP-16 QBW1
GaAs MESFET
Si CMOS
Features
• Single 4.8V Power Supply
• +32dBm Output Power
• 28dB Small Signal Gain
• 55% Power Added Efficiency
• Power Control
• 1700MHz to 1900MHz Frequency Range
PC 1
GND 2
GND 3
VCC1 4
RF IN 5
GND 6
GND 7
NC 8
16 NC
15 GND
14 GND
13 RF OUT
12 RF OUT
11 GND
10 GND
9 NC
Ordering Information
RF2145
RF2145 PCBA
DCS1800/1900 Power Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B5 010329
2-141
RF2145
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
PC
)
DC Supply Current
Input RF Power
Output Load VSWR
Ambient Operating Temperature
Storage Temperature
Rating
-0.5 to +7.5
-0.5 to +3.0
675
+12
5:1
-40 to +85
-40 to +150
Unit
V
DC
V
mA
dBm
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Operating Frequency Range
Usable Frequency Range
Maximum Output Power
Total Efficiency
Input Power for Max Output
Input Intermodulation Distortion
Specification
Min.
Typ.
Max.
Unit
Condition
T=25 °C, V
CC
=4.8V, V
PC
=2.5V,
P
IN
=+8dBm, Freq=1750MHz
1710 to 1785
1850 to 1910
1700 to 1990
+32
55
+8
-57
MHz
MHz
dBm
%
dBm
dBc
1/8 Duty cycle with 600µs pulse width
At maximum output power
Input signal consists of F
1
at 1785MHz at
+8dBm, F
2
at 1765MHz at -42dBm. Output
power at F
1
is set to +32.5dBm. Specified
power level at 1805MHz relative to F
1
. This
refers to the amount of TX band noise which
converts into the receive band.
Input signal consists of F
1
at 1785MHz at
+8dBm, F
2
at 1765MHz at -32dBm. Output
power at F
1
is set to +32.5dBm. Specified
power level at 1805MHz relative to F
1
. This
refers to the amount of TX band noise which
converts into the receive band.
Any gain setting
In “OFF” state, P
IN
=+8dBm
-48
dBc
Output Noise Power in Receive
Band
Isolation
Second Harmonic
Third Harmonic
Input Impedance
Input VSWR
Output Load VSWR
3:1
-137
-25
-48
<-60
50
3.8:1
dBm/Hz
dBm
dBc
dBc
Ω
Worst-case across the band. Using evalua-
tion board; can be different with other layouts
Spurious<-60dBc
V
V
mA
µA
dB
ns
V
V
mA
µA
Threshold voltage
Threshold voltage
In “ON” state
In “OFF” state
Power Control
Power Control “ON”
Power Control “OFF”
Current into PC Input
Power Control Range
Turn On/Off TIme
0.2
2.5
0.5
15
3.0
10
45
100
4.8
2.7
Power Supply Current
550
10
6.5
Power Supply
Power Supply Voltage
Specifications
Operating limits
DC Current at maximum output power
V
PC
=0.5V
2-142
Rev B5 010329
RF2145
Pin
1
Function
PC
Description
Power control pin. This also provides power down when V
PC
is less
than +0.5V. Full power is achieved at 2.5V, and >45dB of gain control is
obtainable over the full range. Approximately 15mA current is drawn
into this pin at full power.
Ground connection. This pin should be connected to the ground plane
through a short path and may be combined with the ground plane from
Pins 3, 6, 7, 10, 11, 14, and 15. All four of these wide leads are tied
together internally to provide a low-inductance and low thermal resis-
tance path to external ground. Ground vias should be placed as close
as possible to each ground lead.
Same as pin 2.
Power supply pin for the first stage. Also provides tuning for interstage
match.
VCC1
Interface Schematic
PC
To RF
Stages
2
GND
2
POWER AMPLIFIERS
3
4
GND
VCC1
RF IN
From Bias
Stages
5
6
7
8
9
10
11
12
RF IN
GND
GND
NC
NC
GND
GND
RF OUT
RF input. This input is DC coupled, so an external blocking capacitor is
required if this pin is connected to a DC path.
Same as pin 2.
Same as pin 2.
No connection.
No connection.
Same as pin 2.
Same as pin 2.
RF output pin. Bias is also fed to the final stage through this wide lead.
External matching is most easily achieved with a series transmission
line and shunt capacitors, as shown in the application schematic.
See pin 4 schematic.
RF OUT
From Bias
Stages
13
14
15
16
RF OUT
GND
GND
NC
Same as pin 12.
Same as pin 2.
Same as pin 2.
No connection.
Rev B5 010329
2-143
RF2145
Application Schematic
DCS 1800
2
POWER AMPLIFIERS
470 pF
PC
470
Ω
33 pF
22 nH
VCC2
4
100 pF
270
Ω
33 pF
RF IN
2.7 nH
7
8
10
9
33 pF
18
Ω
5
6
12
11
13
3
Ω
2
2.0 pF
µstrip
3
15
14
3.3 pF
50
Ω µstrip
33 pF
50
Ω µstrip
50
Ω µstrip
3.0 pF
33 pF
RF OUT
1.1 pF
VCC
1
16
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
C6
470 pF
PC
J1
R2
470
Ω
C2
1
µF
VCC2
4
C1
33 pF
C8
33 pF
L1
2.7 nH
P1
NC
1
2
P1-3
3
GND
VCC
P2-3
NC
P2
1
2
3
GND
VCC2
2145400-
R1
18
Ω
R3
270
Ω
C7
100 pF
5
6
7
8
13
12
11
10
9
C26
3.0 pF
C9
1.1 pF
C10
1 nF
C13
33 pF
L2
22 nH
R4
3
Ω
C5
2.0 pF
1
2
3
16
15
14
C12
33 pF
C29
3.3 pF
C23
10
µF
C25
1 nF
C4
33 pF
VCC
RF OUT
J2
RF IN
J1
2-144
Rev B5 010329
RF2145
Evaluation Board Layout
2” x 2”
2
POWER AMPLIFIERS
Rev B5 010329
2-145
Microcontroller MCU
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