FP1189
½-Watt HFET
Product Features
•
•
•
•
•
•
50 – 4000 MHz
+27 dBm P1dB
+40 dBm Output IP3
High Drain Efficiency
20.5 dB Gain @ 900 MHz
Lead-free/Green/
RoHS-
compliant
SOT-89 Package
•
MTTF >100 Years
Product Description
The FP1189 is a high performance ½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 125 mA to achieve +40 dBm output IP3
performance and an output power of +27 dBm at 1-dB
compression, while providing 20.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP1189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85
°C
and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
•
•
•
•
•
•
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
Specifications
DC Parameter
Saturated Drain Current, I
dss
Transconductance, G
m
Pinch Off Voltage, V
p (2)
(1)
Typical Performance
(5)
Units Min
mA
mS
V
220
Typ
290
155
-2.1
Max
360
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(4)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
Typical
915 1960 2140 2450
20.6 15.7 14.7 13.2
13
26
24
36
6.0
9.6
9.0
7.6
+27.4 +27.2 +27.2 +28.1
+39.9 +40.4 +39.7 +40.0
2.7
3.7
4.3
+21
+20.8
+18.4
RF Parameter
(3)
Operational Bandwidth
Test Frequency
Small Signal Gain
SS Gain (50
Ω,
unmatched)
Maximum Stable Gain
Output P1dB
Output IP3
(4)
Noise Figure
Drain Bias
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
50
Typ
800
20.5
Max
4000
17
21
24
+27.4
+40
2.7
+8 V @ 125 mA
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage
Drain Current
V
mA
+8
125
5. Typical parameters represent performance in a tuned application circuit.
1. I
dss
is measured with V
gs
= 0 V, V
ds
= 3 V.
2. Pinch-off voltage is measured when I
ds
= 1.2 mA.
3. Test conditions unless otherwise noted: T = 25ºC, V
DS
= 8 V, I
DQ
= 125 mA, in a tuned application
circuit with Z
L
= Z
LOPT
, Z
S
= Z
SOPT
(optimized for output power).
4. 3OIP measured with
two
tones at an output power of +12 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
dg
Junction Temperature
Thermal Resistance
-55 to +150
°C
2.0 W
6 dB above Input P1dB
+16 V
+160
°C
50
°C
/ W
Rating
Ordering Information
Part No.
FP1189-G
FP1189-PCB900S
FP1189-PCB1900S
FP1189-PCB2140S
Description
½ -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 package)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 1 of 11
January 2008
FP1189
½-Watt HFET
S-Parameters (V
DS
= +8 V, I
DS
= 125 mA, T = 25
°C,
calibrated to device leads)
S11
2.
0
Typical Device Data
1.0
S22
0.
6
0
3.
S21, MSG (dB)
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
10
5
0
0
1
2
3
4
Frequency (GHz)
5
6
DB(|S[2,1]|)
DB(MSG)
-0.
2
.4
-0
-0
.4
.0
-2
-0.8
Swp Min
0.05GHz
-0 .8
Note:
Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines.
The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device.
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
4250
4500
4750
5000
5250
5500
5750
6000
S11 (mag)
S11 (ang)
S21 (mag)
S21 (ang)
S12 (mag)
S12 (ang)
S22 (mag)
1.000
-4.52
10.313
176.55
0.002
87.44
0.544
0.988
-21.51
10.120
163.88
0.010
76.64
0.535
0.959
-42.21
9.681
148.45
0.020
64.73
0.520
0.933
-61.23
9.005
134.71
0.028
53.45
0.495
0.895
-78.75
8.270
122.08
0.035
44.25
0.469
0.860
-95.09
7.561
109.58
0.040
34.30
0.447
0.848
-109.61
7.028
99.15
0.044
26.69
0.428
0.821
-122.91
6.408
88.96
0.046
19.57
0.407
0.807
-135.32
5.950
79.64
0.048
13.93
0.400
0.796
-147.01
5.474
70.37
0.049
7.21
0.386
0.785
-157.00
5.087
62.43
0.050
2.99
0.374
0.780
-166.26
4.732
53.97
0.050
-1.58
0.376
0.775
-175.87
4.415
45.54
0.049
-6.79
0.369
0.766
175.78
4.082
38.18
0.049
-9.36
0.368
0.770
167.34
3.843
30.76
0.048
-12.48
0.372
0.771
159.87
3.602
23.91
0.050
-14.97
0.369
0.771
152.07
3.408
16.74
0.050
-17.53
0.374
0.771
145.63
3.241
9.15
0.048
-19.53
0.382
0.772
138.97
3.053
2.49
0.048
-21.27
0.387
0.770
132.07
2.876
-4.50
0.050
-23.00
0.396
0.780
126.56
2.743
-10.47
0.048
-25.08
0.408
0.794
120.21
2.622
-17.28
0.049
-26.64
0.412
0.795
114.22
2.507
-24.43
0.051
-30.44
0.423
0.794
108.27
2.346
-31.21
0.052
-30.16
0.442
0.798
102.86
2.237
-36.95
0.052
-31.18
0.446
Device S-parameters are available for download off of the website at: http://www.wj.com
S22 (ang)
-3.02
-13.77
-27.13
-39.31
-50.54
-60.96
-70.64
-79.82
-88.93
-97.59
-105.24
-113.47
-121.84
-129.77
-137.25
-144.61
-152.17
-161.00
-168.31
-175.08
177.65
170.89
162.41
154.66
147.41
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 2 of 11
January 2008
-1.0
-1.0
1
-0.
-0
.6
.
-2
6
0
-3
.0
-3
.0
2
Swp Min
0.05GHz
-4
2
.0
3
1
-5.
0
-0.
2
-10 .0
-10.0
3
0
5
4
5.0
0
10.0
10.0
15
0.2
0
4
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
10.0
0.2
-5.
-4
.0
0.2
20
5
0
4.
5.0
0.
25
4
6
2.
0
30
0.
4
0.6
0.8
0.8
S21, Maximum Stable Gain vs. Frequency
Swp Max
6GHz
1.0
Swp Max
6GHz
3.
0
4.
0
5.0
6
10 .0
FP1189
½-Watt HFET
Application Circuit: 870 – 960 MHz (FP1189-PCB900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 125 mA, 25
°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+12 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
dBm
dB
dBm
870
20.9
-10
-5.2
+27.5
2.7
915
20.6
-13
-6.0
+27.4
+39.9
2.7
+21
960
19.8
-10
-7.6
+27.5
2.6
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
-Vgg
CAP
ID=C10
C=DNP pF
CAP
ID=C4
C=100 0 p F
CAP
ID= C3
C= 6 8 p F
Vds = 8 V @ 125 mA
CAP
ID=C11
C=1e5 pF
CAP
ID=C8
C=1000 pF
CAP
ID= C2
C= 18 pF
CAP
ID=C7
C=68 pF
CAP
ID=C6
C=18 pF
RES
ID= R1
R= 20 Ohm
IND
ID=L1
L=47 nH
PORT
P= 1
Z= 50 Ohm
CAP
ID= C1
C= 68 pF
IND
ID= L4
L= 12 nH
RES
ID=R2
R= 10 Ohm
1
SUBCKT
ID= Q1
NET= "FP1189"
2
RES
ID= L2
R= 0 Ohm
IND
ID=L3
L=47 nH
CAP
ID=C9
C=68 pF
PORT
P= 2
Z= 50 Ohm
CAP
ID=C13
C= 3.9 pF
CAP
ID= C12
C= DNP pF
CAP
ID=C5
C= DNP pF
Bill of Materials
Ref. Desig.
C1, C3, C7, C9
C2, C6
C4, C8
C11
C13
L1, L3
L2
L4
R1
R2
Q1
C5, C12, C10
Value
68 pF
18 pF
1000 pF
0.1
μF
3.9 pF
47 nH
0
Ω
12 nH
10
Ω
20
Ω
FP1189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Chip resistor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 0.5W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
0603
SOT-89
14 mil GETEK
TM
ML200DSS (ε
r
= 4.2)
The main microstrip line has a line impedance of 50
Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 3 of 11
January 2008
FP1189
½-Watt HFET
FP1189-PCB900S Application Circuit Performance Plots
S11 vs. Frequency
S21 vs. Frequency
S22 vs. Frequency
0
-5
S11 (dB)
-10
-15
-20
-25
-30
860
880
900
920
940
960
Frequency (MHz)
P1dB vs. Frequency
-40c
+25c
+85c
22
21
S21 (dB)
20
19
18
-40c
+25c
+85c
0
-5
S22 (dB)
-10
-15
-20
-25
-40c
+25c
+85c
17
860
880
900
920
940
960
Frequency (MHz)
Noise Figure vs. Frequency
-30
860
880
900
920
940
960
Frequency (MHz)
ACPR vs. Channel Power
-30
-40
-50
-60
-40 C
-70
+25 C
20
21
22
+85 C
23
24
IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
30
28
P1dB (dBm)
26
24
22
-40c
+25c
+85c
6
5
NF (dB)
4
3
2
1
0
880
900
920
940
960
860
880
900
920
940
960
Frequency (MHz)
OIP3 vs. Temperature
-40c
+25c
+85c
ACPR (dBc)
freq = 915 MHz
20
860
16
17
18
19
Frequency (MHz)
IMD products vs. Output Power
-20
IMD products (dBm)
fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C
Output Channel Power (dBm)
OIP3 vs. Output Power
45
40
35
30
25
fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C
42
40
OIP3 (dBm)
38
36
34
32
-40
-15
10
35
60
85
Temperature (°C)
Output Power / Gain vs. Input Power
22
20
frequency = 915 MHz, Temp = -40° C
-40
-60
freq = 915, 916 MHz
+12 dBm / tone
IMD_Low
IMD_High
-80
0
4
8
12
16
Output Power (dBm)
20
24
OIP3 (dBm)
0
4
8
12
16
Output Power (dBm)
20
24
Output Power / Gain vs. Input Power
30
Output Power (dBm)
26
22
18
22
20
frequency = 915 MHz, Temp = +25° C
Output Power / Gain vs. Input Power
30
Output Power (dBm)
26
22
18
22
20
frequency = 915 MHz, Temp = +85° C
30
26
Output Power (dBm)
Gain
Gain
Gain (dB)
Gain (dB)
Gain (dB)
Gain
22
18
Output Power
-8
-4
0
4
Input Power (dBm)
8
12
18
16
14
12
-12
-8
-4
0
4
Input Power (dBm)
8
12
18
16
14
12
-12
-8
-4
0
4
Input Power (dBm)
8
12
18
16
14
12
-12
Output Power
14
10
Output Power
14
10
14
10
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 4 of 11
January 2008
FP1189
½-Watt HFET
Application Circuit: 1930 – 1990 MHz (FP1189-PCB1900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 125 mA, 25
°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+12 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
dBm
dB
dBm
1930
15.8
-26
-9.2
+27.4
1960
15.7
-26
-9.6
+27.2
+40.4
3.7
+20.8
1990
15.5
-24
-9.0
+27.4
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
CAP
CAP
CAP
ID=C4
ID=C3
ID=C10
C=33 pF C=DNP pF C=DNP pF
-Vgg
Vds = 8 V @ 125 mA
CAP
ID=C11
C=1e5 pF
CAP
ID=C12
C=DNP pF
RES
ID=R1
R=100 Ohm
CAP
ID=C8
C=DNP pF
CAP
ID=C7
C=DNP pF
CAP
ID=C6
C=33 pF
IND
ID=L3
L=22 nH
CAP
ID=C13
C=DNP pF
CAP
ID=C2
C=DNP pF
SUBCKT
ID=Q1
NET="FP1189"
2
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=33 pF
IND
ID=L1
L=22 nH
IND
ID=L2
L=2.7 nH
CAP
ID=C9
C=33 pF
PORT
P=2
Z=50 Ohm
1
CAP
ID=C15
C=1.8 pF
CAP
ID=C13
C=DNP pF
RES
ID=R2
R=10 Ohm
CAP
ID=C5
C=0.5 pF
Bill of Materials
Ref. Desig.
C1, C4, C6, C9
C5
C11
C15
L1, L3
L2
R1
R2
Q1
C2, C3, C7, C8,
C10, C12, C13, C14
Value
33 pF
0.5 pF
0.1
μF
1.8 pF
22 nH
2.7 nH
100
Ω
10
Ω
FP1189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 0.5W HFET
Do Not Place
Size
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50
Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 5 of 11
January 2008
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