single phase silicon bridge rectifier voltage:50 TO 1000v current:10.0A
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Gulf Semiconductor |
| package instruction | R-PUFM-W4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 400 V |
| Shell connection | ISOLATED |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V |
| JESD-30 code | R-PUFM-W4 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 200 A |
| Number of components | 4 |
| Phase | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Maximum output current | 6 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Maximum repetitive peak reverse voltage | 400 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | UPPER |
| Base Number Matches | 1 |
| KBPC1004 | KBPC1010 | KBPC1008 | KBPC1001 | KBPC1006 | KBPC10005 | |
|---|---|---|---|---|---|---|
| Description | single phase silicon bridge rectifier voltage:50 TO 1000v current:10.0A | 10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE | single phase silicon bridge rectifier voltage:50 TO 1000v current:10.0A | single phase silicon bridge rectifier voltage:50 TO 1000v current:10.0A | single phase silicon bridge rectifier voltage:50 TO 1000v current:10.0A | single phase silicon bridge rectifier voltage:50 TO 1000v current:10.0A |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | R-PUFM-W4 | R-PUFM-W4 | R-PUFM-W4 | R-PUFM-W4 | R-PUFM-W4 | R-PUFM-W4 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Minimum breakdown voltage | 400 V | 1000 V | 800 V | 100 V | 600 V | 50 V |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| JESD-30 code | R-PUFM-W4 | R-PUFM-W4 | R-PUFM-W4 | R-PUFM-W4 | R-PUFM-W4 | R-PUFM-W4 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 200 A | 200 A | 200 A | 200 A | 200 A | 200 A |
| Number of components | 4 | 4 | 4 | 4 | 4 | 4 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| Maximum output current | 6 A | 6 A | 6 A | 6 A | 6 A | 6 A |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Maximum repetitive peak reverse voltage | 400 V | 1000 V | 800 V | 100 V | 600 V | 50 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER |
| Base Number Matches | 1 | 1 | 1 | - | 1 | - |
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