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TF218

Description
Capacitor Microphone Applications
CategoryDiscrete semiconductor    The transistor   
File Size32KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

TF218 Overview

Capacitor Microphone Applications

TF218 Parametric

Parameter NameAttribute value
MakerSANYO
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain current (ID)0.001 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Ordering number : ENN7088
TF218
N-channel Silicon Junction FET
TF218
Capacitor Microphone Applications
Features
Package Dimensions
unit : mm
2201
[TF218]
1.4
0.2
3
1.2
0.8
0.2
2
0.45
0.07
1
0.07
Ultrasmall package facilitates miniaturization in end
products.
Especially suited for use in audio, telephone capacitor
microphones.
Excellent voltage characteristic.
Excellent transient characteristic.
Adoption of FBET process.
0.25
0.2
(Bottom view)
0.1
3
0.46
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
1 : Drain
2 : Source
3 : Gate
1
2
(Top view)
SANYO : VSFP
Unit
--20
10
1
100
150
--55 to +150
V
mA
mA
mW
°C
°C
Ratings
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
IG=--100µA
VDS=5V, ID=1µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
Conditions
Ratings
min
--20
-
-0.2
140*
0.5
1.0
3.5
0.65
--0.6
--1.0
350*
typ
max
Unit
V
V
µA
mS
pF
pF
Continued on next page.
* : The TF218 is classified by IDSS as follows : (unit :
µA)
Marking
IDSS
A4
140 to 240
A5
210 to 350
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3001 TS IM TA-3366 No.7088-1/4

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