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P600B

Description
6 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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P600B Overview

6 A, 100 V, SILICON, RECTIFIER DIODE

P600A THRU P600M
GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Case Style P600
Forward Current -
6.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High forward current capability
Construction utilizes void-free
molded plastic technique
High surge current capability
High temperature soldering guaranteed:
250°C/10 seconds, 0.375” (9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Case:
Void-free molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.07 ounce, 2.1 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
P600A
P600B
P600D
P600G
P600J
P600K
P600M
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at
T
A
=60°C, 0.375" (9.5mm) lead length
(FIG 1)
T
L
=60°C, 0.125" (3.18mm) lead length
(FIG 2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at: 6.0A
100A
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
(NOTE 1)
Typical reverse recovery time
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
T
A
= 25°C
T
A
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
6.0
22.0
400.0
0.90
1.30
5.0
1.0
150.0
2.5
20.0
4.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
I
FSM
Amps
1.0
1.4
V
F
I
R
C
J
t
rr
R
ΘJA
R
ΘJL
T
J
, T
STG
Volts
µA
mA
pF
µS
°C/W
°C
-50 to +150
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Reverse recovery time conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length,
P.C.B. mounted with 1.1 x 1.1 (30 x 30mm) copper pads
10/12/98

P600B Related Products

P600B P600M P600K P600J P600G P600D P600A
Description 6 A, 100 V, SILICON, RECTIFIER DIODE 6 A, 1000 V, SILICON, RECTIFIER DIODE 6 A, 800 V, SILICON, RECTIFIER DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE
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