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VG3617161DT-10

Description
16mb cmos synchronous dynamic ram
Categorystorage    storage   
File Size937KB,70 Pages
ManufacturerVanguard International Semiconductor Corporation
Websitehttp://www.vis.com.tw/
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VG3617161DT-10 Overview

16mb cmos synchronous dynamic ram

VG3617161DT-10 Parametric

Parameter NameAttribute value
MakerVanguard International Semiconductor Corporation
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts50
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
JESD-30 codeR-PDSO-G50
length20.95 mm
memory density16777216 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals50
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm
VIS
Description
Preliminary
VG3617161DT
16Mb CMOS Synchronous Dynamic RAM
The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank.
It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
power supply. This SDRAM is delicately designed with performance concern for current high-speed applica-
tion. Programmable CAS Latency and Burst Length make it possible to be used in widely various domains. It
is packaged by using JEDEC standard pinouts and standard plastic 50-pin TSOP II.
Features
• Single 3.3V +/- 0.3V power supply
• Clock Frequency: 180MHz, 166MHz, 143MHz, 125MHz, 100MHz
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Dual internal banks controlled by A11(Bank select)
• Simultaneous and independent two bank operation
• I/O level : LVTTL interface
• Random column access in every cycle
• X16 organization
• Byte control by LDQM and UDQM
• 4096 refresh cycles/64ms
• Burst termination by burst stop and precharge command
Document:1G5-0160
Rev.1
Page 1

VG3617161DT-10 Related Products

VG3617161DT-10 VG3617161DT VG3617161DT-6 VG3617161DT-8 VG3617161DT-7
Description 16mb cmos synchronous dynamic ram 16mb cmos synchronous dynamic ram 16mb cmos synchronous dynamic ram 16mb cmos synchronous dynamic ram 16mb cmos synchronous dynamic ram
Maker Vanguard International Semiconductor Corporation - Vanguard International Semiconductor Corporation Vanguard International Semiconductor Corporation Vanguard International Semiconductor Corporation
Parts packaging code TSOP2 - TSOP2 TSOP2 TSOP2
package instruction TSOP2, - TSOP2, TSOP50,.46,32 TSOP2, TSOP50,.46,32 TSOP2, TSOP50,.46,32
Contacts 50 - 50 50 50
Reach Compliance Code unknown - unknown unknown unknown
ECCN code EAR99 - EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST - DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
JESD-30 code R-PDSO-G50 - R-PDSO-G50 R-PDSO-G50 R-PDSO-G50
length 20.95 mm - 20.95 mm 20.95 mm 20.95 mm
memory density 16777216 bit - 16777216 bit 16777216 bit 16777216 bit
Memory IC Type SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 16 - 16 16 16
Number of functions 1 - 1 1 1
Number of ports 1 - 1 1 1
Number of terminals 50 - 50 50 50
word count 1048576 words - 1048576 words 1048576 words 1048576 words
character code 1000000 - 1000000 1000000 1000000
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C - 70 °C 70 °C 70 °C
organize 1MX16 - 1MX16 1MX16 1MX16
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 - TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm - 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V - 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V
surface mount YES - YES YES YES
technology CMOS - CMOS CMOS CMOS
Temperature level COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form GULL WING - GULL WING GULL WING GULL WING
Terminal pitch 0.8 mm - 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL - DUAL DUAL DUAL
width 10.16 mm - 10.16 mm 10.16 mm 10.16 mm
Is it Rohs certified? - - incompatible incompatible incompatible
Maximum access time - - 5.5 ns 6 ns 6 ns
Other features - - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) - - 166 MHz 125 MHz 143 MHz
I/O type - - COMMON COMMON COMMON
interleaved burst length - - 1,2,4,8 1,2,4,8 1,2,4,8
JESD-609 code - - e0 e0 e0
Output characteristics - - 3-STATE 3-STATE 3-STATE
Encapsulate equivalent code - - TSOP50,.46,32 TSOP50,.46,32 TSOP50,.46,32
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply - - 3.3 V 3.3 V 3.3 V
refresh cycle - - 4096 4096 4096
self refresh - - YES YES YES
Continuous burst length - - 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current - - 0.0035 A 0.0035 A 0.0035 A
Maximum slew rate - - 0.185 mA 0.165 mA 0.175 mA
Terminal surface - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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