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P5968-100

Description
SPECIALTY OPTOELECTRONIC DEVICE
CategoryLED optoelectronic/LED    photoelectric   
File Size163KB,4 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Environmental Compliance
Download Datasheet Parametric Compare View All

P5968-100 Overview

SPECIALTY OPTOELECTRONIC DEVICE

P5968-100 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerHamamatsu
Reach Compliance Codeunknow
ConfigurationSINGLE
Number of functions1
Maximum operating temperature60 °C
Minimum operating temperature-40 °C
Optoelectronic device typesOPTOELECTRONIC DEVICE
INFRARED DETECTOR
InSb photovoltaic detector
P5968/P4247 series
High-speed response, low-noise photovoltaic detector
P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 µm. Custom devices are also
available to meet your special request.
Features
Repumpable metal dewars (liquid nitrogen cooling)
allow 8-hour hold time. Starling cooling type without
pour-filled liquid nitrogen is also provided.
l
Built-in preamp type available
Built-in preamp allows high precision photometry.
P7751-01 (Uses P5968-060.)
P7751-02 (Uses P5968-200.)
Applications
l
Cooling hold time: 8 hours
l
Thermometers (radiometers)
l
Thermal imaging
l
Remote sensing
l
Gas analysis
l
FTIR
l
Spectrophotometry
Accessories (Optional)
l
Amplifier for InSb photovoltaic detector
I
Specification / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
1
Package
Cooling
Active area
(mm)
f0.6
f1
f2
f3
f1
0.25 × 1.4 *
2
0.45 × 0.45 *
3
Number of
element
1
1
1
1
1
1 × 16
4×4
C4159-01 (active aera: smaller than
φ1
mm)
C4159-04 (active area:
φ2
mm)
[Custom amplifier is also available for use
with P5968-300 (3 mm dia. type)]
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
V
R
Topr
Tstg
(V)
(°C)
(°C)
P5968-060
P5968-100
Liquid
➀/Si
Metal dewar
nitrogen
P5968-200
P5968-300
Metal
Stirling
P5968-105
➁/Si
P4247-16
Liquid
Metal dewar
➂/Si
nitrogen
P4247-44
*1: Window material Si: silicon (with AR coated)
*2: Size per 1 element (16 element array)
*3: Size per 1 element (4 × 4 element array)
0.5
-40 to +60
-55 to +60
I
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Peak
Photo
condition
sensitivity
Cut-off
sensitivity
Shunt
resistance
Element
wavelength
wavelength
S
temperature
Rsh
lc
l=lp
lp
T
(°C)
(mm)
(mm)
(A/W)
1
1
1
5
1
1
1
(W)
× 10
7
× 10
6
× 10
5
× 10
4
× 10
6
× 10
7
× 10
7
D
*
(500 K, 1200, 1)
D
*
(lp, 1200, 1)
NEP
l=lp
Type No.
P5968-060
P5968-100
P5968-200
P5968-300
P5968-105
P4247-16
P4247-44
-196
5.3
5.5
2.5
Typ.
Min.
(cm· Hz
1/2
/W) (cm· Hz
1/2
/W) (cm· Hz
1/2
/W)
(W/Hz
1/2
)
3.3 × 10
-13
5.5 × 10
-13
1.1 × 10
-12
10
10
11
2 × 10
3 × 10
1.6 × 10 1.6 × 10
-12
5.5 × 10
-13
6.5 × 10
-13
5.0 × 10
-13
Rise time
Terminal
capacitance
tr
V
R
=0 V
Ct
R
L
=50
W
V
R
=0 V
0 to 63 %
f=1 MHz
(ns)
30
70
150
600
70
70
60
(pF)
30
100
200
900
100
100
60
1

P5968-100 Related Products

P5968-100 P5968-105 P5968-300 P5968-200 P5968-060 P4247-44 P4247-16
Description SPECIALTY OPTOELECTRONIC DEVICE SPECIALTY OPTOELECTRONIC DEVICE SPECIALTY OPTOELECTRONIC DEVICE SPECIALTY OPTOELECTRONIC DEVICE SPECIALTY OPTOELECTRONIC DEVICE SPECIALTY OPTOELECTRONIC DEVICE SPECIALTY OPTOELECTRONIC DEVICE
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Number of functions 1 1 1 1 1 1 1
Maximum operating temperature 60 °C 60 °C 60 °C 60 °C 60 °C 60 °C 60 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Optoelectronic device types OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE
Is it Rohs certified? conform to - conform to conform to conform to - -
Maker Hamamatsu - Hamamatsu Hamamatsu Hamamatsu - Hamamatsu
Configuration SINGLE - SINGLE SINGLE SINGLE - -

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