INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU808
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 700V(Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in three-phase AC motor control systems
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage V
BE
=0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
1500
700
5
12
20
8
12
160
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.78
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU808
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.2A ;I
B
= 0; L=25 mH
B
700
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
= 9A; I
B
= 4A
B
1
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 12A; I
B
= 6A
3
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 9A; I
B
= 4A
B
1.5
1
4
10
V
I
CES
Collector Cutoff Current
V
CE
= V
CESmax
;V
BE
= 0
V
CE
= V
CESmax
;V
BE
= 0; T
J
= 125℃
V
EB
= 5V; I
C
=0
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
I
C
= 1A; V
CE
= 5V
8
I
S/B
Second Breakdown Current
V
CE
= 100V; t
p
= 1 s
0.4
A
C
OB
Output Capacitance
I
E
= 0; V
CB
= 10V, f
test
= 1MHz
200
pF
f
T
Current-Gain—Bandwidth Product
I
C
= 0.1A ; V
CE
= 5V, f
test
= 5MHz
7
MHz
Switching Times
t
on
Turn-On Time
1.5
μs
t
s
Storage Time
I
C
= 9A; I
B1
= -I
B2
= 4A
4.5
μs
t
f
Fall Time
0.5
μs
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
EEWORLD
