VIS
Description
or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
VG26(V)(S)17400FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated
with an advanced submicron CMOS technology and designed to operate from a single 5V only
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin
plastic SOJ or TSOP (II).
Features
• Single 5V (
±
10 %) or 3.3V (+10%,-5%) only power supply
• High speed t
RAC
access time : 50/60 ns
• Low power dissipation
- Active mode :
5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode :
5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
• Fast Page Mode access
• I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 2048 refresh cycles in 32 ms (Std) or 128ms (S - version)
• 4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
Document :
Rev.
Page 1
VIS
Truth Table
ADDRESSES
FUNCTION
STANDBY
READ
WRITE : (EARLY
WRITE)
READ WRITE
PAGE -
MODE READ
1st Cycle
2st
Cycle
RAS
H
L
L
L
L
L
L
L
L
L
L
→
H
→
L
L
→
H
→
L
VG26(V)(S)17400FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
CAS
H
→
X
WE
X
H
L
H
→
L
OE
X
L
X
L
→
H
L
L
X
X
L
→
H
L
→
H
ROW
X
ROW
ROW
ROW
ROW
n/a
ROW
n/a
ROW
n/a
ROW
ROW
ROW
X
COL
X
High - Z
DQ
S
Notes
L
L
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
COL Data - Out
COL Data - In
COL Data - Out, Data - In
COL Data - Out
COL Data - Out
COL Data - In
COL Data - In
COL Data - Out, Data - In
COL Data - Out, Data - In
COL Data - Out
COL Data - In
n/a
X
High - Z
High - Z
1
H
H
L
L
H
→
L
H
→
L
PAGE -
1st Cycle
MODE WRITE
2st
Cycle
PAGE - MODE 1st Cycle
READ - WRITE
2st
Cycle
HIDDEN
REFRESH
READ
WRITE
L
L
H
L
H
L
X
H
L
X
X
X
RAS - ONLY REFRESH
CBR REFRESH
Notes : 1. EARLY WRITE only.
L
H
→
L
Document :
Rev.
Page 4
VIS
Absolute Maximum Rating
Parameter
Voltage on any pin relative to Vss
Supply voltage relative to Vss
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
5V
3.3V
5V
3.3V
Symbol
V
T
V
cc
I
OUT
P
D
T
OPT
T
STG
Value
-1.0 to + 7.0
-0.5 to + 4.6
-1.0 to + 7.0
-0.5 to + 4.6
50
1.0
0 to + 70
-55 to + 125
VG26(V)(S)17400FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Unit
V
V
mA
W
°C
°C
Recommended DC Operating Conditions
Parameter/Condition
Supply Voltage
Input High Voltage, all inputs
Input Low Voltage, all inputs
Symbol
V
cc
V
IH
V
IL
5 Volt Version
Min
Typ
Max
4.5
5.0
5.5
2.4
-1.0
-
-
V
CC
+ 1.0
0.8
3.3 Volt Version
Min
Typ
Max
3.15
3.3
3.6
2.0
-0.3
-
-
V
CC
+ 0.3
0.8
Unit
V
V
V
Capacitance
Ta = 25°C, V
CC
=
5V
±
10
% or 3.3V(+10%,-5%), f = 1MHz
Parameter
Input capacitance (Address)
Input capacitance
(RAS, CAS, OE, WE)
Symbol
C
l1
C
l2
Typ
-
-
Max
5
7
Unit
pF
pF
pF
Note
1
1
1,2
Output capacitance
C
I/O
-
7
(Data - in, Data - out)
Note : 1. Capacitance measured with effective capacitance measuring method.
2. CAS = V
IH
to disable Dout.
Document :
Rev.
Page 5
Embedded System
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