EGF10A THRU EGF10M
SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
NTED
ENTED
PAT
E
PAT
0.115(2.92)
0.090(2.28)
DO-214AC
FEATURES
0.064(1.63)
0.050(1.27)
0.181(4.60)
0.157(4.00)
0.016(0.40)
0.006(0.15)
0.102(2.60)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.220(5.60)
0.190(4.83)
*
*
*
*
*
*
*
GPRC (Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
Ideal for surface mount automotive applications
Superfast recovery time for high efficiency
Built-in strain relief
Easy pick and place
o
High temperature soldering guaranteed: 260 C/10 seconds,
at terminals
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
MECHANICAL DATA
Case :
JEDEC DO-214AC molded plastic over passivated chip
Terminals :
Solder plated , solderable per MIL-STD-750,
Method 2026
Polarity :
Color band denotes cathode end
Mounting Position :
Any
Weight :
0.002 ounes , 0.064 gram
*Dimensions in inches and (millimeters)
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
SYMBOLS
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
A
=75 C
Peak forward surge current 8.3ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0 A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
T
A
=25 C
o
T
A
=125 C
o
T
A
=150 C
o
o
o
EGF10
A
50
35
50
B
100
70
100
D
200
140
200
F
300
210
300
G
400
280
400
J
600
420
600
K
800
560
800
M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
V
RRM
V
RMS
V
DC
I
(AV)
1.0
30
1.0
5
30
50
50
15
75
25
-65 to +175
1.25
25
1.7
5
50
-
75
Amps
Volts
V
F
I
R
uA
trr
C
J
R
R
JA
JL
nS
pF
o
C/W
o
T
J
,T
STG
-55 to +150
C
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. : 0
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES EGF10A THRU EGF10M
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
RESISTIVE OR
INDUCTIVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
30
PEAK FORWARD SURGE CURRENT,
AMPERES
25
20
EGF10A~EGF10G
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
EGF10A~EGF10G
EGF10J~EGF10M
0.5
15
EGF10J~EGF10M
10
5
0
0
0
25
50
75
100
125
o
150
175
1
10
NUMBER OF CYCLES AT 60Hz
100
AMBIENT TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
PULSE WIDTH=300uS
1% DUTY CYCLE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
1.00
0.10
1
T
J
=125 C
T
J
=150 C
o
o
0.01
0.2
EGF10J~EGF10M
EGF10G
EGF10A~EGF10F
0.1
0
1.8
20
40
60
80
100 110
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
200
JUNCTION CAPACITANCE, pF
TRANSIENT THERMAL IMPEDANCE( C/W)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
T
J
= 25 C
o
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
o
10
1
0.1
0.01
0.10
1.0
10
100
t , PULSE DURATION, sec
REV. : 0
Zowie Technology Corporation
Power technology
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