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MP4TD0635T

Description
silicon bipolar mmic cascadable amplifier
File Size51KB,3 Pages
ManufacturerM-pulse Microwave
Websitehttp://www.mpulsemw.com/index.html
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MP4TD0635T Overview

silicon bipolar mmic cascadable amplifier

M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 0.8 GHz
18.5 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
3.5 Voltage Operation
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0635 and MP4TD0636 are high
performance silicon bipolar MMICs housed in a cost
effective ceramic microstrip packages. The MP4TD0635
and MP4TD0636 are designed for use where a general
purpose 50Ω gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD0635 and MP4TD0636 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
MP4TD0635, MP4TD0636
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD0636.
4
.085
2,15
RF OUT
AND BIAS
3
.020
0,508
GND
RF INPUT
1
2
GND
.100
2,54
ø .083
2,11
.057
1,45
.455 ±.030
11,54 ±0,76 MA4TD0635
0.180±0.010
MA4TD0636
4,57 ±0,25
.022
0,56
.006 ±.002
0,15 ±0,05
TYPICAL POWER GAIN vs FREQUENCY
22
20
18
16
GAIN (dB)
14
12
10
8
6
4
2
0
0 .1
1
F R E Q U E N C Y (G H z)
10
Id= 1 6 m A
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2&4
3
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Min.
19
-
-
-
-
-
-
-
-
3.1
-
Typ.
20.0
±0.8
0.8
2.0
1.8
4.5
3.0
14.5
200
3.5
-8.0
Max.
22
±1.0
-
-
-
-
4.0
-
-
3.9
-
Electrical Specifications @ T
A
= +25°C, Id = 16 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
2
)
Gp
Power Gain (
S
21
f = 0.1 GHz
Gp
Gain Flatness
f = 0.1 to 0.6 GHz
f
3dB
3 dB Bandwidth
-
SWR
in
Input SWR
f = 0.1 to 1.5 GHz
SWR
out
Output SWR
f = 0.1 to 1.5 GHz
P
1dB
Output Power @ 1 dB Gain Compression f = 0.5 GHz
NF
f = 0.5 GHz
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
f = 0.5 GHz
t
D
Group Delay
f = 0.5 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
1
FX (408) 432-3440

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