Certificate TH97/10561QM
Certificate TW00/17276EM
BAT54/54A/54C/54S
PRV : 30 Volts
Io : 200 mA
FEATURES :
* These diodes feature very low turn-on voltage
* Fast switching
* These devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges
* Pb / RoHS Free
SMALL SIGNAL SCHOTTKY
DIODE, SINGLE & DUAL
SOT-23
1.40
0.95
0.50
0.35
0.19
0.08
1
3.10
2.70
1.65
1.20
3.0
2.2
1.02
0.89
3
2
0.100
0.013
2.04
1.78
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* BAT54 Marking Code : L4
* BAT54A Marking Code : L42
* BAT54C Marking Code : L43
* BAT54S Marking Code : L44
BAT54
3
Dimensions in millimeters
BAT54A
3
BAT54C
3
BAT54S
3
1
2
1
2
1
2
1
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Rectified Average Forward Current
Maximum Repetitive Peak Forward Current
Maximum Peak Forward Surge Current at tp < 1 s
Total Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
P
tot
R
ӨJA
T
J
T
STG
Value
30
200
(1)
300
(1)
600
(1)
230
430
125
-65 to +150
(1)
Unit
V
mA
mA
mA
mW
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(Rating at
Parameter
Reverse Breakdown Voltage
Leakage Current (Note 2)
Forward Voltage (Note 2)
25 °C ambient temperature unless otherwise specified.)
Test Condition
I
R
= 100 µA pulses
V
R
= 25 V
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA through I
R
= 10 mA,
to Irr = 1A , R
L
= 100
Ω
Symbol
V
(BR)
I
R
V
F
V
F
V
F
V
F
V
F
C
tot
Trr
Min.
30
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
2
240
320
400
500
800
10
5
Unit
V
µA
mV
mV
mV
mV
mV
pF
ns
Diode Capacitance
Reverse Recovery Time
Notes :
(1) Device on fiberglass substrate
(2) Pulse test tp < 300 µs,
δ<
2%
Page 1 of 2
Rev. 01 : April 17, 2006
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES ( BAT54/54A/54C/54S )
FIG.1 - DERATING CURVE
FIG.2 - TYPICAL CAPACITANCE
VS. REVERSE VOLTAGE
14
12
10
8
6
4
2
0
f = 1.0 MHz
250
POWER DISSIPATION, (mA)
200
R
ӨJA
= 430 K/W
150
100
50
0
0
25
50
75
100
125
150
175
TOTAL CAPACITANCE , (pF)
0
4
8
16
20
24
28
AMBIENT TEMPERATURE, ( °C)
REVERSE VOLTAGE , (V)
FIG.3 - TYPICAL FORWARD VOLTAGE FORWARD
CURRENT AT VARIOUS TEMPERATURE
1000
FIG.4 - TYPICAL VARIATION OF REVERSE
CURRENT AT VARIOUS TEMPERATURES
1000
T
J
= 125 °C
100
T
J
= 125 °C
100
FORWARD CURRENT, (mA)
REVERSE CURRENT, (µA)
T
J
= 75 °C
10
10
T
J
= 25 °C
1.0
1.0
T
J
= 25 °C
0.1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0
5
10
15
20
25
30
FORWARD VOLTAGE, (V)
REVERSE VOLTAGE, (V)
Page 2 of 2
Rev. 01 : April 17, 2006
Embedded System
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